Inventor
ZHENYU LU
Inventor
CN
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices26%
H01LSemiconductor devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H10DInorganic electric semiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
G06FElectric digital data processing4%
G11CStatic stores4%
G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes3%
H04LTransmission of digital information, e.g. telegraphic communication1%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use1%
PatentTitleYear
12,575,105Multiple-stack three-dimensional memory device and fabrication method thereof202612,517,970Method and system for providing alternative result for an online search previously with no result202612,490,440Three-dimensional memory devices and fabricating methods thereof202512,204,594Method and system for providing alternative result for an online search previously with no result202512,185,551Methods for forming ferroelectric memory devices202412,185,550Through array contact structure of three-dimensional memory device202412,142,575Staircase etch control in forming three-dimensional memory device202412,137,568Hybrid bonding contact structure of three-dimensional memory device202412,137,558Staircase structure for memory device202412,137,567Interconnect structure of three-dimensional memory device202412,063,780Memory cell structure of a three-dimensional memory device202412,010,838Staircase structure for memory device202411,991,880Three-dimensional memory devices and fabricating methods thereof202411,968,832Multiple-stack three-dimensional memory device and fabrication method thereof202411,956,953Joint opening structures of three-dimensional memory devices and methods for forming the same202411,949,022Three dimensional memory202411,943,928Method for forming channel hole plug of three-dimensional memory device202411,860,955Method and system for providing alternative result for an online search previously with no result202411,805,646Three-dimensional memory devices and methods for forming the same202311,791,265Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof202311,785,776Through array contact structure of three-dimensional memory device202311,758,732Hybrid bonding contact structure of three-dimensional memory device202311,699,657Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer202311,665,893Methods and apparatuses having strings of memory cells including a metal source202311,626,424Semiconductor devices and methods of fabrication202311,609,723Approach for providing access to cloud services on end-user devices using local management of third-party services202311,599,586Method and system for providing alternative result for an online search previously with no result202311,545,505Through array contact structure of three-dimensional memory device202311,527,547Hybrid bonding contact structure of three-dimensional memory device202211,482,532Joint opening structures of three-dimensional memory devices and methods for forming the same202211,462,474Three-dimensional memory devices having a plurality of NAND strings202211,380,701Memory device and forming method thereof202211,309,327Method for forming channel hole plug of three-dimensional memory device202211,289,611Three dimensional memory202211,276,642Method for forming three-dimensional integrated wiring structure and semiconductor structure thereof202211,271,004Memory device and forming method thereof202211,264,397Source structure of three-dimensional memory device and method for forming the same202211,211,393Memory device and forming method thereof202111,211,397Three-dimensional memory devices and methods for forming the same202111,145,666Staircase structure for memory device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to YANGTZE MEMORY TECH CO LTD (30)· patent assignee history
2021–2026Based in CN· patent location history
2022–2024Patents assigned to MICRON TECHNOLOGY INC (4)· patent assignee history
2022–2026Based in US· patent location history
2023–2026Patents assigned to TRANSF SR BRANDS LLC (4)· patent assignee history
2023Patents assigned to LU ZHENYU (1)· patent assignee history
2023Patents assigned to NADKARNI BHUSHAN (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 30 | 2021–2026 |
| MICRON TECHNOLOGY INC | 4 | 2022–2024 |
| TRANSF SR BRANDS LLC | 4 | 2023–2026 |
| LU ZHENYUself | 1 | 2023 |
| NADKARNI BHUSHAN | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 30 | 2021–2026 |
| US | 10 | 2022–2026 |