Inventor
Naoto Tate
Inventor
Camas, WA, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
C30BSingle-crystal growth16%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%
C23CCoating metallic material11%
Y10TTechnical subjects covered by former us classification7%
H10DInorganic electric semiconductor devices5%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
PatentTitleYear
7,288,418'Process for treating substrates for the microelectronics industry, and substrates obtained by this process'20077,029,993'Method for treating substrates for microelectronics and substrates obtained according to said method'20066,897,124'Method of manufacturing a bonded wafers using a Bernoulli chuck'20056,846,718'Method for producing SOI wafer and SOI wafer'20056,720,640'Method for reclaiming delaminated wafer and reclaimed delaminated wafer'20046,596,610'Method for reclaiming delaminated wafer and reclaimed delaminated wafer'20036,569,749'Silicon and oxygen ion co-implanation for metallic gettering in epitaxial wafers'20036,372,609'Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method'20026,284,629'Method of fabricating an SOI wafer and SOI wafer fabricated by the method'20016,254,933'Method of chemical vapor deposition'20016,072,164'Heat-treating method and radiant heating device'20006,048,793'Method and apparatus for thin film growth'20006,022,793'Silicon and oxygen ion co-implantation for metallic gettering in epitaxial wafers'20005,938,840'Method for vapor phase growth'19995,764,353'Back side damage monitoring system'19985,755,878'Method for vapor phase growth'19985,749,974'Method of chemical vapor deposition and reactor therefor'19985,718,762'Method for vapor-phase growth'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2005Patents assigned to SHINETSU HANDOTAI KK (11)· patent assignee history
1998–2003Patents assigned to SEH AMERICA INC (3)· patent assignee history
1998–2001Based in Camas, WA, US· patent location history
2000Patents assigned to SHIN ESTU HANDOTAI CO LTD (1)· patent assignee history
2000–2005Based in Gunma, JP· patent location history
2000Based in Vancouver, WA, US· patent location history
2001Patents assigned to SHIN ETSU HANDOTAI LTD (1)· patent assignee history
2002–2005Based in Annaka, JP· patent location history
2003–2007Patents assigned to SOITEC SILICON ON INSULATOR (4)· patent assignee history
2006–2007Based in Annaka-shi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHINETSU HANDOTAI KK | 11 | 1998–2005 |
| SOITEC SILICON ON INSULATOR | 4 | 2003–2007 |
| SEH AMERICA INC | 3 | 1998–2003 |
| SHIN ESTU HANDOTAI CO LTD | 1 | 2000 |
| SHIN ETSU HANDOTAI LTD | 1 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Camas, Washington, US | 7 | 1998–2001 |
| Gunma, JP | 5 | 2000–2005 |
| Annaka, JP | 3 | 2002–2005 |
| Annaka-shi, JP | 2 | 2006–2007 |
| Vancouver, Washington, US | 1 | 2000 |