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Inventor

John J. Hautala

Inventor
Beverly, MA, US

Overview

82→
Patents
2001–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 82 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H01JElectric discharge tubes or discharge lamps18%
H01LSemiconductor devices14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
C23CCoating metallic material10%
H10DInorganic electric semiconductor devices8%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
H10BElectronic memory devices3%
H10NElectric solid-state devices not otherwise provided for2%
C23FNon-mechanical removal of metallic material from surface1%
PatentTitleYear
11,043,394Techniques and apparatus for selective shaping of mask features using angled beams202111,043,380Techniques to engineer nanoscale patterned features using ions202110,990,014Performance improvement of EUV photoresist by ion implantation202110,971,368Techniques for processing substrates using directional reactive ion etching202110,886,279Device structure for forming semiconductor device having angled contacts202110,818,499Optical component having variable depth gratings and method of formation202010,692,872Device structure for forming semiconductor device having angled contacts202010,685,865Method and device for power rail in a fin type field effect transistor202010,665,433Extreme edge uniformity control202010,629,437Techniques and structure for forming dynamic random-access device using angled ions202010,600,675Techniques and structure for forming thin silicon-on-insulator materials202010,553,448Techniques for processing a polycrystalline layer using an angled ion beam202010,546,730Filling a cavity in a substrate using sputtering and deposition202010,545,408Performance improvement of EUV photoresist by ion implantation202010,403,738Techniques for improved spacer in nanosheet device201910,381,232Techniques for manipulating patterned features using ions201910,310,379Multiple patterning approach using ion implantation201910,229,832Techniques for forming patterned features using directional ions201910,204,909Non-uniform gate oxide thickness for DRAM device201910,113,229Techniques for controlling ion/neutral ratio of a plasma source201810,109,498Composite patterning mask using angled ion beam deposition201810,008,384Techniques to engineer nanoscale patterned features using ions201810,002,764Sputter etch material selectivity20189,997,351Apparatus and techniques for filling a cavity using angled ion beam20189,984,889Techniques for manipulating patterned features using ions20189,934,981Techniques for processing substrates using directional reactive ion etching20189,929,015'High efficiency apparatus and method for depositing a layer on a three dimensional structure'20189,885,957'Ion-assisted deposition and implantation of photoresist to improve line edge roughness'20189,735,013'Ion implantation for improved contact hole critical dimension uniformity'20179,659,784'Ion-assisted deposition and implantation of photoresist to improve line edge roughness'20179,512,517'Multiple exposure treatment for processing a patterning feature'20169,287,123'Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films'20169,236,257'Techniques to mitigate straggle damage to sensitive structures'20169,190,498'Technique for forming a FinFET device using selective ion implantation'20159,118,001'Techniques for treating sidewalls of patterned structures using angled ion treatment'20159,103,031'Method and system for growing a thin film using a gas cluster ion beam'20159,082,949'Magnetic memory and method of fabrication'20159,070,854'Techniques for patterning multilayer magnetic memory devices using ion implantation'20158,992,785'Method for modifying an etch rate of a material layer using energetic charged particles'20158,946,836'Magnetic memory and method of fabrication'20158,877,299'Method for enhancing a substrate using gas cluster ion beam processing'20148,709,944'Method to alter silicide properties using GCIB treatment'20148,703,607'Method to alter silicide properties using GCIB treatment'20148,697,549'Deposition of porous films for thermoelectric applications'20148,691,103'Surface profile adjustment using gas cluster ion beam processing'20148,691,700'Gas cluster ion beam etch profile control using beam divergence'20148,592,784'Method for modifying a material layer using gas cluster ion beam processing'20138,481,340'Method for preparing a light-emitting device using gas cluster ion beam processing'20138,435,890'Method to alter silicide properties using GCIB treatment'20138,372,489'Method for directional deposition using a gas cluster ion beam'20138,313,663'Surface profile adjustment using gas cluster ion beam processing'20128,237,136'Method and system for tilting a substrate during gas cluster ion beam processing'20128,226,835'Ultra-thin film formation using gas cluster ion beam processing'20128,192,805'Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices'20128,187,971'Method to alter silicide properties using GCIB treatment'20128,048,788'Method for treating non-planar structures using gas cluster ion beam processing'20117,981,483'Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices'20117,982,196'Method for modifying a material layer using gas cluster ion beam processing'20117,968,422'Method for forming trench isolation using a gas cluster ion beam growth process'20117,947,582'Material infusion in a trap layer structure using gas cluster ion beam processing'20117,905,199'Method and system for directional growth using a gas cluster ion beam'20117,883,999'Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam'20117,838,423'Method of forming capping structures on one or more material layer surfaces'20107,825,389'Method and apparatus for controlling a gas cluster ion beam formed from a gas mixture'20107,799,683'Copper interconnect wiring and method and apparatus for forming thereof'20107,794,798'Method for depositing films using gas cluster ion beam processing'20107,759,251'Dual damascene integration structure and method for forming improved dual damascene integration structure'20107,754,588'Method to improve a copper/dielectric interface in semiconductor devices'20107,521,089'Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers'20097,410,890'Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation'20087,396,745'Formation of ultra-shallow junctions by gas-cluster ion irradiation'20087,291,558'Copper interconnect wiring and method of forming thereof'20077,259,036'Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products'20077,115,511'GCIB processing of integrated circuit interconnect structures'20067,060,989'Method and apparatus for improved processing with a gas-cluster ion beam'20066,900,129'CVD of tantalum and tantalum nitride films from tantalum halide precursors'20056,812,147'GCIB processing to improve interconnection vias and improved interconnection via'20046,413,860'PECVD of Ta films from tanatalum halide precursors'20026,410,433'Thermal CVD of TaN films from tantalum halide precursors'20026,410,432'CVD of integrated Ta and TaNx films from tantalum halide precursors'20026,268,288'Plasma treated thermal CVD of TaN films from tantalum halide precursors'20016,265,311'PECVD of TaN films from tantalum halide precursors'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2009Patents assigned to TOKYO ELECTRON LTD (7)· patent assignee history
2001–2021Based in Beverly, MA, US· patent location history
2007–2015Patents assigned to TEL EPION INC (32)· patent assignee history
2012–2015Patents assigned to HAUTALA JOHN J (13)· patent assignee history
2014–2016Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT (8)· patent assignee history
2016–2021Patents assigned to VARIAN SEMICONDUCTOR EQUIPMENT ASS INC (30)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TEL EPION INC322007–2015
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC302016–2021
HAUTALA JOHN Jself132012–2015
VARIAN SEMICONDUCTOR EQUIPMENT82014–2016
TOKYO ELECTRON LTD72001–2009
Locations
LocationPatentsSpan
Beverly, Massachusetts, US822001–2021