Inventor

Hisaki Kato

Inventor

Aichi, JP

Overview

1991–2012

Patent span

Electricity

Primary field (CPC H)

Patents· 39 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary

H10HInorganic light-emitting semiconductor devices having potential barriers46%

H01JElectric discharge tubes or discharge lamps13%

C30BSingle-crystal growth8%

B82YSpecific uses or applications of nanostructures6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%

B25JManipulators4%

G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light4%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%

PatentTitleYear

8,122,834'Suspension type robot whose robot body runs along traveling rail'2012 7,922,439'Industrial robot'2011 7,867,800'Light-emitting semiconductor device using group III nitrogen compound'2011 7,623,243'Spectroscopic device'2009 7,403,286'Spectroscopic analyzing apparatus'2008 7,332,366'Light-emitting semiconductor device using group III nitrogen compound'2008 7,323,674'Photodetector using photomultiplier and gain control method'2008 7,138,286'Light-emitting semiconductor device using group III nitrogen compound'2006 7,115,854'Photomultiplier and photodetector including the same'2006 7,102,284'Photomultiplier'2006 7,045,809'Light-emitting semiconductor device using gallium nitride compound semiconductor'2006 7,001,790'Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity'2006 6,984,536'Method for manufacturing a gallium nitride group compound semiconductor'2006 6,881,651'Methods and devices using group III nitride compound semiconductor'2005 6,853,009'Light-emitting semiconductor device using gallium nitride compound semiconductor'2005 6,830,992'Method for manufacturing a gallium nitride group compound semiconductor'2004 6,794,629'Photomultiplier'2004 6,617,668'Methods and devices using group III nitride compound semiconductor'2003 6,617,787'Light-emitting system with alicyclic epoxy sealing member'2003 6,607,595'Method for producing a light-emitting semiconductor device'2003 6,593,599'Light-emitting semiconductor device using gallium nitride group compound'2003 6,472,689'Light emitting device'2002 6,472,690'Gallium nitride group compound semiconductor'2002 6,423,984'Light-emitting semiconductor device using gallium nitride compound semiconductor'2002 6,362,017'Light-emitting semiconductor device using gallium nitride group compound'2002 6,265,726'Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity'2001 6,249,012'Light emitting semiconductor device using gallium nitride group compound'2001 6,005,258'Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities'1999 5,905,276'Light emitting semiconductor device using nitrogen-Group III compound'1999 5,886,341'Photodetection tube with a slidably adapted cathode substrate'1999 5,733,796'Light-emitting semiconductor device using gallium nitride group compound'1998 5,719,390'Photodetection tube with a lid and cathode holding member in thermal contact with a cooler'1998 5,650,641'Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device'1997 5,620,557'Sapphireless group III nitride semiconductor and method for making same'1997 5,604,763'Group III nitride compound semiconductor laser diode and method for producing same'1997 5,481,158'Electron multiplier with improved dynode geometry for reduced crosstalk'1996 5,278,433'Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer'1994 5,122,845'Substrate for growing gallium nitride compound-semiconductor device and light emitting diode'1992 5,007,718'Electrochromic elements and methods of manufacturing and driving the same'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2011Patents assigned to TOYODA GOSEI KK (27)· patent assignee history

1994–2006Patents assigned to UNIV NAGOYA (10)· patent assignee history

1994–2006Based in Okazaki, JP· patent location history

1996–2009Patents assigned to HAMAMATSU PHOTONICS KK (9)· patent assignee history

1996–2009Based in Hamamatsu, JP· patent location history

1997–1999Patents assigned to AKASAKI ISAMU (3)· patent assignee history

1997–2011Based in Aichi, JP· patent location history

1999–2008Based in Nakashima-gun, JP· patent location history

2001–2004Patents assigned to JAPAN SCIENCE & TECH CORP (6)· patent assignee history

2011–2012Based in Kariya, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOYODA GOSEI KK	27	1991–2011
UNIV NAGOYA	10	1994–2006
HAMAMATSU PHOTONICS KK	9	1996–2009
JAPAN SCIENCE & TECH CORP	6	2001–2004
AKASAKI ISAMU	3	1997–1999

Locations

Location	Patents	Span
Aichi, JP	10	1997–2011
Okazaki, JP	10	1994–2006
Hamamatsu, JP	9	1996–2009
Nakashima-gun, JP	4	1999–2008
Kariya, JP	2	2011–2012