Inventor
Masato Yonezawa
Inventor
Kanagawa, JP
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material13%
H10DInorganic electric semiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
H10KOrganic electric solid-state devices7%
G09GArrangements or circuits for control of indicating devices using static means to present variable information6%
H04NPictorial communication, e.g. television6%
H01JElectric discharge tubes or discharge lamps4%
PatentTitleYear
10,668,512Particle removal method and substrate processing method202010,385,453Film forming apparatus201910,103,009Plasma processing device and operation method20189,941,343Area sensor and display apparatus provided with an area sensor20189,865,454'Substrate processing apparatus and substrate processing method'20189,711,582'Area sensor and display apparatus provided with an area sensor'20179,376,751'Plasma processing device and operation method'20169,337,243'Area sensor and display apparatus provided with an area sensor'20169,082,677'Area sensor and display apparatus provided with an area sensor'20158,563,096'Vertical film formation apparatus and method for using same'20138,378,443'Area sensor and display apparatus provided with an area sensor'20138,298,628'Low temperature deposition of silicon-containing films'20128,216,648'Film formation method and apparatus'20128,058,699'Area sensor and display apparatus provided with an area sensor'20118,012,787'Photovoltaic device and manufacturing method thereof'20117,953,512'Substrate processing system, control method for substrate processing apparatus and program stored on medium'20117,786,544'Area sensor and display apparatus provided with an area sensor'20107,594,479'Plasma CVD device and discharge electrode'20097,528,057'Laser annealing method and laser annealing device'20097,510,901'Conveyor device and film formation apparatus for a flexible substrate'20097,462,376'CVD method for forming silicon nitride film'20087,384,828'Semiconductor film, semiconductor device and method of their production'20087,365,004'Method for manufacturing semiconductor device'20087,351,605'Method of manufacturing a semiconductor device'20087,041,580'Laser annealing method and laser annealing device'20067,030,551'Area sensor and display apparatus provided with an area sensor'20066,916,509'Conveyor device and film formation apparatus for a flexible substrate'20056,846,696'Method for manufacturing solar battery'20056,827,787'Conveyor device and film formation apparatus for a flexible substrate'20046,825,492'Method of manufacturing a semiconductor device'20046,743,700'Semiconductor film, semiconductor device and method of their production'20046,692,984'Method of manufacturing a semiconductor device'20046,620,288'Substrate treatment apparatus'20036,444,506'Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation'20026,348,369'Method for manufacturing semiconductor devices'20026,027,960'Laser annealing method and laser annealing device'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2018Patents assigned to SEMICONDUCTOR ENERGY LAB (24)· patent assignee history
2000–2018Based in Kanagawa, JP· patent location history
2003–2009Patents assigned to TDK CORP (7)· patent assignee history
2008–2020Patents assigned to TOKYO ELECTRON LTD (8)· patent assignee history
2008–2011Based in Tokyo, JP· patent location history
2011–2013Patents assigned to YONEZAWA MASATO (5)· patent assignee history
2011–2013Based in Nirasaki, JP· patent location history
2012–2013Patents assigned to HASEBE KAZUHIDE (3)· patent assignee history
2016–2020Based in Iwate, JP· patent location history
2019Based in Oshu, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR ENERGY LAB | 24 | 2000–2018 |
| TOKYO ELECTRON LTD | 8 | 2008–2020 |
| TDK CORP | 7 | 2003–2009 |
| YONEZAWA MASATOself | 5 | 2011–2013 |
| HASEBE KAZUHIDE | 3 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 24 | 2000–2018 |
| Iwate, JP | 4 | 2016–2020 |
| Nirasaki, JP | 4 | 2011–2013 |
| Tokyo, JP | 2 | 2008–2011 |
| Oshu, JP | 1 | 2019 |