Inventor
Kyong Bong Rouh
Inventor
Icheon-si, KR
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H01LSemiconductor devices18%
H10BElectronic memory devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H01JElectric discharge tubes or discharge lamps2%
PatentTitleYear
9,553,159'Semiconductor devices having polysilicon gate patterns and methods of fabricating the same'20179,418,891'Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same'20169,368,586'Transistor with recess gate and method for fabricating the same'20169,318,390'CMOS circuit and method for fabricating the same'20169,236,263'Method for fabricating semiconductor device including silicon-containing layer and metal-containing layer, and conductive structure of the same'20168,981,486'CMOS circuit and method for fabricating the same'20158,912,064'Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the same'20148,859,370'Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the same'20148,513,103'Method for manufacturing vertical transistor having buried junction'20138,481,390'Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the same'20138,481,431'Method for opening one-side contact region of vertical transistor and method for fabricating one-side junction region using the same'20138,470,664'Methods of fabricating a dual polysilicon gate and methods of fabricating a semiconductor device using the same'20138,431,981'Semiconductor memory device having vertical transistor and buried bit line and method for fabricating the same'20137,728,312'Apparatus and method for partial ion implantation'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010Patents assigned to HYNIX SEMICONDUCTOR INC (1)· patent assignee history
2010Based in Goyang-si, KR· patent location history
2013–2017Patents assigned to SK HYNIX INC (13)· patent assignee history
2013Patents assigned to EUN YONG SEOK (5)· patent assignee history
2013Patents assigned to ROUH KYONG BONG (5)· patent assignee history
2013Patents assigned to PARK EUN SHIL (3)· patent assignee history
2013–2017Based in Icheon-si, KR· patent location history
2013Based in Seoul, KR· patent location history
2015–2016Based in Gyeonggi-do, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SK HYNIX INC | 13 | 2013–2017 |
| EUN YONG SEOK | 5 | 2013 |
| ROUH KYONG BONGself | 5 | 2013 |
| PARK EUN SHIL | 3 | 2013 |
| HYNIX SEMICONDUCTOR INC | 1 | 2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Icheon-si, KR | 7 | 2013–2017 |
| Gyeonggi-do, KR | 5 | 2015–2016 |
| Seoul, KR | 1 | 2013 |
| Goyang-si, KR | 1 | 2010 |