Inventor

Kazuya Uenishi

Inventor

Shizuoka, JP

Overview

1989–2021

Patent span

Physics

Primary field (CPC G)

Patents· 46 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices36%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests20%

C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds7%

C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds6%

C07DHeterocyclic compounds4%

C08CTreatment or chemical modification of rubbers4%

C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients4%

C08LCompositions of macromolecular compounds4%

Y02TClimate change mitigation technologies related to transportation4%

B60CVehicle tyres3%

PatentTitleYear

11,008,445Aromatic vinyl-diene copolymer, method for producing aromatic vinyl-diene copolymer, and rubber composition2021 11,001,654Diene polymer, method for producing diene polymer, and rubber composition2021 10,590,221Modified diene based polymer2020 9,458,274'Method of manufacturing terminal-modified polymer'2016 9,458,265'Method of manufacturing terminal-modified polymer'2016 9,228,064'Modified diene based polymer'2016 8,158,719'Benzoxazine-formulations with reduced outgassing behaviour'2012 7,432,381'1,3-oxathiolane-2-thione compounds'2008 7,179,578'Positive resist composition'2007 7,179,579'Radiation-sensitive composition'2007 7,078,687'Thin film analyzing method'2006 6,962,766'Positive photoresist composition'2005 6,897,004'Intermediate layer material composition for multilayer resist process and pattern formation process using the same'2005 6,887,645'Negative resist composition'2005 6,884,571'Intermediate layer composition for three-layer resist process and pattern formation method using the same'2005 6,803,173'Positive resist composition'2004 6,673,512'Negative-working resist composition'2004 6,511,783'Negative resist composition'2003 6,489,080'Positive resist composition'2002 6,265,135'Positive-working electron beam or X-ray resist composition'2001 6,200,729'Positive photosensitive composition'2001 6,150,068'Photosensitive resin composition for far-ultraviolet exposure'2000 6,013,411'Positive working photosensitive composition'2000 6,010,820'Positive photosensitive composition'2000 5,981,140'Positive photosensitive composition'1999 5,955,238'Waterless planographic printing plate and method of plate making using the same'1999 5,891,603'Positive working photosensitive composition'1999 5,837,420'Positive working photosensitive composition'1998 5,731,123'Positive image forming composition'1998 5,683,856'Positive-working photosensitive composition'1997 5,576,139'Positive type photoresist composition comprising a novolak resin made with a silica-magnesia solid catalyst'1996 5,565,300'Positive photoresist composition'1996 5,529,881'Postive photoresist composition'1996 5,380,618'Micropattern-forming material having a low molecular weight novolak resin, a quinone diazide sulfonyl ester and a solvent'1995 5,360,692'Positive type 1,2-naphthoquinonediazide photoresist composition containing benzotriazole light absorbing agent'1994 5,340,697'Negative type photoresist composition'1994 5,324,619'Positive quinone diazide photoresist composition containing select polyhydroxy additive'1994 5,290,658'Positive type photoresist composition comprising polyaromatic hydroxy quinone diazide esters as the photosensitive ingredient'1994 5,248,582'Positive-type photoresist composition'1993 5,173,389'Positive-working photoresist composition'1992 5,153,096'Positive type photoresist composition comprising as a photosensitive ingredient a derivative of a triphenylmethane condensed with an o-quinone diazide'1992 5,089,373'Positive photoresist composition utilizing O-quinonediazide and novolak resin'1992 4,904,706'Soft polyurethane foam from hydroxyl urethane prepolymer and polyester ether polyol'1990 4,894,311'Positive-working photoresist composition'1990 4,871,645'Positive-working photoresist composition'1989 4,863,828'Positive-working o-quinone diazide photoresist composition'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2007Patents assigned to FUJI PHOTO FILM CO LTD (37)· patent assignee history

1989–2007Based in Shizuoka, JP· patent location history

1990Patents assigned to DAINIPPON INK & CHEMICALS (1)· patent assignee history

1990Based in Takaishi, JP· patent location history

2008–2012Based in Nara, JP· patent location history

2012Patents assigned to ENDO TAKESHI (1)· patent assignee history

2012Patents assigned to HENKEL AG & CO KGAA (1)· patent assignee history

2016–2021Patents assigned to YOKOHAMA RUBBER CO LTD (6)· patent assignee history

2016–2021Based in Kanagawa, JP· patent location history

2021Based in Hiratsuka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
FUJI PHOTO FILM CO LTD	37	1989–2007
YOKOHAMA RUBBER CO LTD	6	2016–2021
DAINIPPON INK & CHEMICALS	1	1990
ENDO TAKESHI	1	2012
HENKEL AG & CO KGAA	1	2012

Locations

Location	Patents	Span
Shizuoka, JP	37	1989–2007
Kanagawa, JP	5	2016–2021
Nara, JP	2	2008–2012
Hiratsuka, JP	1	2021
Takaishi, JP	1	1990