Inventor

Jeffrey Scott Cross

Inventor
Kawasaki, JP

Overview

22→
Patents
2001–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices27%
H10DInorganic electric semiconductor devices22%
F41CSmallarms, e.g. pistols, rifles11%
G11CStatic stores11%
F41AFunctional features or details common to both smallarms and ordnance, e.g. cannons9%
LOC229%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
PatentTitleYear
10,215,513AR style receiver compatible with pistol magazines and cartridges2019D0841109Lower receiver for a firearm201910,156,420Receiver and collapsible stock for a firearm2018D0832969Upper receiver for a firearm2018D0810225'Bolt-on collapsible stock assembly for a firearm'20189,766,034'Bolt-on collapsible stock assembly for a firearm'2017D0795983'Combination upper and lower receiver for a firearm'20179,746,282'Buttstock for a buffer tube'20179,574,846'Receiver and collapsible buttstock for a firearm'20177,473,949'Ferroelectric capacitor and method of manufacturing the same'20097,413,913'Semiconductor device and method of manufacturing the same'20087,241,656'Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device'20077,239,026'Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip'20077,176,509'Semiconductor device and method for manufacturing the same'20077,075,135'Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film'20067,017,430'Inspection device and inspection method of dielectric film, and method of manufacturing semiconductor device'20066,890,769'Ferroelectric capacitor having upper electrode lamination and manufacture thereof'20056,674,633'Process for producing a strontium ruthenium oxide protective layer on a top electrode'20046,649,954'Ferroelectric capacitor having upper electrode lamination'20036,555,864'Ferroelectric capacitor having a PZT layer with an excess of Pb'20036,392,265'Semiconductor device'20026,194,228'Electronic device having perovskite-type oxide film, production thereof, and ferroelectric capacitor'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2009Patents assigned to FUJITSU LTD (13)· patent assignee history
2001–2009Based in Kawasaki, JP· patent location history
2004Based in Kanagawa, JP· patent location history
2017–2018Patents assigned to CROSS JEFFREY S (4)· patent assignee history
2017–2018Patents assigned to HUANG GEORGE (4)· patent assignee history
2017Patents assigned to BATTLE ARMS DEV INC (1)· patent assignee history
2017–2019Based in Lexington, TN, US· patent location history
2018–2019Patents assigned to SENTRY SOLUTIONS PRODUCTS GROUP LLC (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FUJITSU LTD132001–2009
CROSS JEFFREY Sself42017–2018
HUANG GEORGE42017–2018
SENTRY SOLUTIONS PRODUCTS GROUP LLC22018–2019
BATTLE ARMS DEV INC12017
Locations
LocationPatentsSpan
Kawasaki, JP122001–2009
Lexington, TN, US92017–2019
Kanagawa, JP12004