Inventor
Masaharu Nagai
Inventor
Kanagawa, JP
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices24%
H10KOrganic electric solid-state devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10HInorganic light-emitting semiconductor devices having potential barriers13%
H01LSemiconductor devices8%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B82YSpecific uses or applications of nanostructures3%
C30BSingle-crystal growth3%
PatentTitleYear
10,903,402Display device and method for manufacturing the same202110,367,124Display device and method for manufacturing the same201910,141,452Semiconductor device, manufacturing method thereof, and electronic device20189,923,127'Display device and method for manufacturing the same'20189,871,145'Semiconductor device, manufacturing method thereof, and electronic device'20189,691,905'Semiconductor device, manufacturing method thereof, and electronic device'20179,472,656'Semiconductor device and method for manufacturing the same'20169,142,679'Method for manufacturing semiconductor device using oxide semiconductor'20158,723,417'Display device and method for manufacturing the same'20148,486,772'Method of manufacturing SOI substrate'20138,455,873'Electronics device, semiconductor device, and method for manufacturing the same'20138,426,945'Semiconductor device, method for manufacturing semiconductor device, and electronic appliance'20138,362,693'Display device and manufacturing method of display device'20138,283,862'Light emitting device and method for manufacturing the same'20128,198,173'Method for manufacturing SOI substrate'20128,168,481'Method of manufacturing SOI substrate'20128,044,574'Display device and manufacturing method of display device'20118,034,674'Semiconductor device, method for manufacturing semiconductor device, and electronic appliance'20117,960,733'Electronics device, semiconductor device, and method for manufacturing the same'20117,947,538'Semiconductor device and manufacturing method thereof'20117,928,654'Display device and method for manufacturing the same'20117,914,971'Light exposure mask and method for manufacturing semiconductor device using the same'20117,875,419'Method for removing resist pattern and method for manufacturing semiconductor device'20117,829,432'Method for manufacturing SOI substrate'20107,816,863'Light emitting device and method for manufacturing the same'20107,799,515'Method of fabricating semiconductor device, and developing apparatus using the method'20107,737,449'Light emitting device and method of manufacturing thereof'20107,608,490'Semiconductor device and manufacturing method thereof'20097,579,220'Semiconductor device manufacturing method'20097,520,790'Display device and manufacturing method of display device'20097,465,593'Electronics device, semiconductor device, and method for manufacturing the same'20087,446,336'Electronics device, semiconductor device, and method for manufacturing the same'20087,344,825'Method of fabricating semiconductor device, and developing apparatus using the method'20087,306,978'Light emitting device and method of manufacturing thereof'20076,456,639'Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same'20026,414,975'Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including same'20026,069,020'Method of manufacturing semiconductor light-emitting device'20006,024,794'Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination'20006,020,601'Semiconductor light-emitting device'20005,865,897'Method of producing film of nitrogen-doped II-VI group compound semiconductor'19995,828,086'Semiconductor light emitting device with a Mg superlattice structure'19985,695,556'Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination'19975,665,977'Semiconductor light emitting device with defect decomposing and blocking layers'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2002Patents assigned to SONY CORP (9)· patent assignee history
1997–2021Based in Kanagawa, JP· patent location history
2007–2021Patents assigned to SEMICONDUCTOR ENERGY LAB (34)· patent assignee history
2007–2016Based in Atsugi, JP· patent location history
2012–2014Patents assigned to NAGAI MASAHARU (8)· patent assignee history
2012–2014Patents assigned to MATSUDA YUTAKA (3)· patent assignee history
2012–2013Patents assigned to YAMAZAKI SHUNPEI (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR ENERGY LAB | 34 | 2007–2021 |
| SONY CORP | 9 | 1997–2002 |
| NAGAI MASAHARUself | 8 | 2012–2014 |
| MATSUDA YUTAKA | 3 | 2012–2014 |
| YAMAZAKI SHUNPEI | 3 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 27 | 1997–2021 |
| Atsugi, JP | 16 | 2007–2016 |