Inventor
Chih-Han Lin
Inventor
Hsinchu, TW
Overview
Patents· 237 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices32%
H10DInorganic electric semiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10BElectronic memory devices2%
F03GSpring, weight, inertia or like motors0%
H01JElectric discharge tubes or discharge lamps0%
G01NInvestigating or analysing materials by determining their chemical or physical properties0%
PatentTitleYear
10,879,364Semiconductor structure and manufacturing method thereof202010,872,965Method of forming semiconductor structure202010,872,890Semiconductor device202010,872,968Semiconductor device202010,868,002Semiconductor structure and manufacturing method thereof202010,868,012Semiconductor device and manufacturing method thereof202010,867,865Method and structure for FinFET isolation202010,868,179Fin-type field effect transistor structure and manufacturing method thereof202010,868,139Controlling profiles of replacement gates202010,868,189Semiconductor device and manufacturing method thereof202010,868,138Metal gate formation through etch back process202010,868,188Semiconductor device and method202010,861,977FinFET isolation structure202010,854,507Method of forming trenches202010,854,742Metal gate electrode of a semiconductor device202010,854,504Semiconductor structure and manufacturing method thereof202010,854,542Via structure and methods thereof202010,840,144Structure and formation method of semiconductor device structure202010,840,153Notched gate structure fabrication202010,840,242Fin structure and method of forming same through two-step etching processes202010,840,379Semiconductor device202010,811,536FinFET device and method of forming and monitoring quality of the same202010,811,538Semiconductor device with gate stack202010,811,412Method of fabricating semiconductor device202010,811,506Self-aligned metal gate etch back process and device202010,797,140Semiconductor device and method202010,796,955Fin field effect transistor (FinFET) device structure with interconnect structure202010,777,419Semiconductor device with fin isolation and method of forming the same202010,763,362Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same202010,763,258Integrated circuit and manufacturing method thereof202010,748,912Method for semiconductor device fabrication with improved source drain proximity202010,749,014Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features202010,727,178Via structure and methods thereof202010,727,132Fin field effect transistor, semiconductor device and method for fabricating the same202010,727,227Fin-type field effect transistor structure and manufacturing method thereof202010,714,581Semiconductor device and manufacturing method thereof202010,714,588Metal gate process for FinFET device improvement202010,700,208Semiconductor device and methods of manufacture202010,700,180Semiconductor structure and manufacturing method thereof202010,692,723Gate isolation plugs structure and method202010,692,701Dry etching apparatus202010,679,989Enlarging spacer thickness by forming a dielectric layer over a recessed interlayer dielectric202010,672,796Mechanisms for forming FINFET device202010,672,908Fin field effect transistor202010,658,491Controlling profiles of replacement gates202010,658,485Semiconductor device and manufacturing method thereof202010,643,947Semiconductor structure and manufacturing method thereof202010,636,787Semiconductor structure and manufacturing method thereof202010,629,491Semiconductor manufacturing method202010,622,353Semiconductor device202010,553,706Method for manufacturing semiconductor fin structure with extending gate structure202010,546,754Semiconductor structure and manufacturing method thereof202010,541,204Interconnection structure and method of forming the same202010,535,603Method of forming interconnection structure202010,535,758Gate structure of field effect transistor with footing202010,535,558Method of forming trenches202010,522,414Method and structure for FinFET isolation201910,522,536Structure and formation method of semiconductor device with gate stacks201910,522,635Semiconductor device and method201910,515,955Methods of manufacturing transistor gate structures by local thinning of dummy gate stacks using an etch barrier201910,516,052Semiconductor device and method201910,515,793FinFET device201910,515,959Source/drain regions in fin field effect transistors (finFETs) and methods of forming same201910,515,960Semiconductor device and method201910,510,897Semiconductor device and manufacturing method thereof201910,510,850Semiconductor device and method201910,510,752Semiconductor device and manufacturing method thereof201910,510,755Semiconductor device and manufacture method thereof201910,510,893Method for fabricating FinFET isolation structure201910,510,890Fin-type field effect transistor structure and manufacturing method thereof201910,510,866Semiconductor structure and fabrication method thereof201910,510,539Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same201910,510,896Method for manufacturing semiconductor device201910,504,895FinFET isolation structure and method for fabricating the same201910,505,003Semiconductor structure and manufacturing method thereof201910,497,793Method for manufacturing semiconductor structure201910,483,364Semiconductor structure and manufacturing method thereof201910,483,398Semiconductor device with gate stack201910,468,308FinFET structures and methods of forming the same201910,468,348Method for manufacturing interconnection201910,460,942Method of manufacturing semiconductor structure201910,431,687Structure and formation method of semiconductor device structure201910,396,184Integrated circuit device fins201910,395,983Method of forming trenches201910,367,079Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features201910,366,926Structure and formation method of semiconductor device structure201910,366,915FinFET devices with embedded air gaps and the fabrication thereof201910,366,990Fin field effect transistor and semiconductor device201910,355,110FinFET and method of forming same201910,332,790Fin field effect transistor (FinFET) device structure with interconnect structure201910,332,879Fin-type field effect transistor structure and manufacturing method thereof201910,332,991Metal gate electrode of a semiconductor device201910,312,352Gate structure of field effect transistor with footing201910,283,641Contact structures, FinFET devices and methods of forming the same201910,283,605Self-aligned metal gate etch back process and device201910,276,662Method of forming contact trench201910,269,793Source/drain regions in fin field effect transistors (FinFETs) and methods of forming same201910,269,650Structure and formation method of semiconductor device structure201910,269,802Semiconductor device and manufacturing method thereof201910,269,908FinFET and method of forming same201910,269,795Semiconductor structure and manufacturing method thereof201910,263,113Semiconductor device and method201910,263,090Semiconductor device and manufacturing method thereof201910,217,741Fin structure and method of forming same through two-step etching processes201910,205,004FinFET isolation structure and method for fabricating the same201910,192,987Fin-type field effect transistor structure and manufacturing method thereof201910,186,511Metal gate isolation structure and method forming same201910,177,005Critical dimension control for double patterning process201910,170,427Semiconductor device and method201910,164,113Semiconductor device and manufacturing method thereof201810,163,722Method and structure for FinFet isolation201810,163,649Semiconductor structure and manufacturing method thereof201810,163,912Method for semiconductor device fabrication with improved source drain proximity201810,164,029Semiconductor structure and manufacturing method thereof201810,164,111Semiconductor device and methods of manufacture201810,164,046Method for manufacturing semiconductor structure201810,163,640Gate isolation plugs structure and method201810,157,918Semiconductor device and method201810,157,795Semiconductor device201810,157,783Semiconductor devices, FinFET devices and methods of forming the same201810,153,374Semiconductor device and manufacturing method thereof201810,153,370Fin-type field effect transistor structure and manufacturing method thereof201810,147,821Fin field effect transistor201810,134,669Method for forming fin field effect transistor (FinFET) device structure with interconnect structure201810,121,787Methods for fabricating Fin field effect transistors201810,109,627Enlarging spacer thickness by forming a dielectric layer over a recessed interlayer dielectric201810,096,712FinFET device and method of forming and monitoring quality of the same201810,096,598Methods for fabricating fin field effect transistors201810,090,249Semiconductor structure and manufacturing method thereof201810,084,085Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same201810,079,205Interconnection structure and method of forming the same201810,049,922Method of forming trenches201810,050,128Gate structure of field effect transistor with footing201810,043,886Metal gate formation through etch back process201810,037,917Structure and formation method of semiconductor device structure201810,037,993Method of making a FinFET device201810,032,914Semiconductor device and manufacturing method thereof201810,032,877FinFET and method of forming same201810,032,913Contact structures, FinFET devices and methods of forming the same201810,032,774Semiconductor device and manufacture method thereof201810,032,916Formation method of semiconductor device structure with gate stack201810,020,304Fin field effect transistor, semiconductor device and fabricating method thereof20189,997,632Fin-type field effect transistor device and manufacturing method thereof20189,991,256Semiconductor structure and manufacturing method thereof20189,991,205Semiconductor device and method20189,991,375Metal gate electrode of a semiconductor device20189,991,285Mechanisms for forming FinFET device20189,985,031Integrated circuit and manufacturing method thereof20189,954,081Fin field effect transistor, semiconductor device and fabricating method thereof20189,953,874FinFETs and methods of forming FinFETs20189,941,407Method of forming FinFET20189,934,985Critical dimension control for double patterning process20189,935,103Semiconductor device and manufacturing method thereof20189,929,242'Semiconductor device and manufacturing method thereof'20189,929,271'Semiconductor device and method'20189,923,070'Semiconductor structure and manufacturing method thereof'20189,922,816'Source and drain process for FinFET'20189,917,085'Metal gate isolation structure and method forming same'20189,917,176'Method for fabricating FinFET isolation structure'20189,911,645'Method for forming fin field effect transistor (FinFET) device structure with interconnect structure'20189,899,266'FinFET structures and methods of forming the same'20189,899,320'Interconnection and manufacturing method thereof'20189,893,184'Fin-type field effect transistor device and method of fabricating the same'20189,893,060'Semiconductor device and manufacturing method thereof'20189,887,136'Semiconductor devices, FinFET devices, and methods of forming the same'20189,876,115FinFET isolation structure and method for fabricating the same20189,859,156'Interconnection structure with sidewall dielectric protection layer'20189,847,330Fin field effect transistor and method for fabricating the same20179,837,505Metal gate process for FinFET device improvement20179,837,536Semiconductor device including fin structures and manufacturing method therof20179,837,510Method for manufacturing semiconductor fin structure with extending gate structure20179,818,649'Method and structure for FinFET isolation'20179,812,549'Formation method of semiconductor device structure'20179,799,651'Semiconductor structure and manufacturing method thereof'20179,799,649'Semiconductor device and manufacturing method thereof'20179,793,407'Fin field effect transistor'20179,793,406'Semiconductor device and manufacturing method thereof'20179,786,505'FinFET device using dummy fins for smooth profiling'20179,786,564'Semiconductor device and manufacturing method thereof'20179,780,026'Interconnection structure and method of forming the same'20179,780,092'Semiconductor device having a filling conductor comprising a plug portion and a cap portion and manufacturing method thereof'20179,773,871'Fin field effect transistor and method for fabricating the same'20179,773,912'Semiconductor device and manufacturing method thereof'20179,773,696'Semiconductor structure and manufacturing method thereof'20179,768,170'Fin field effect transistor and method for fabricating the same'20179,768,168'Fin-type field effect transistor structure and manufacturing method thereof'20179,761,483'Semiconductor devices, FinFET devices and methods of forming the same'20179,748,394'FinFET having a multi-portioned gate stack'20179,735,256'Method and structure for FinFET comprising patterned oxide and dielectric layer under spacer features'20179,728,501'Method of forming trenches'20179,722,079'Fin-type field effect transistor structure and manufacturing method thereof'20179,716,093'Semiconductor device'20179,716,154'Semiconductor structure having a gas-filled gap'20179,704,752'Fin field effect transistor and method for fabricating the same'20179,704,751'Semiconductor device and method for fabricating the same'20179,704,969'Fin semiconductor device having multiple gate width structures'20179,685,554'Fin field effect transistor and semiconductor device'20179,673,331'Structure and formation method of semiconductor device structure'20179,659,813'Interconnection and manufacturing method thereof'20179,653,364'FinFET device and method of forming the same'20179,627,375'Indented gate end of non-planar transistor'20179,627,316'Field effect transistor devices having interconnect structures and manufacturing method thereof'20179,627,537'FinFET device and method of forming the same'20179,627,379'FinFET devices and methods of forming the same'20179,620,417'Apparatus and method of manufacturing fin-FET devices'20179,620,621'Gate structure of field effect transistor with footing'20179,614,089'Structure and formation method of semiconductor device structure'20179,590,032'Fin-FET device and manufacturing method thereof'20179,577,036'FinFET isolation structure and method for fabricating the same'20179,570,567'Source and drain process for FinFET'20179,559,100'Semiconductor device and manufacturing method thereof'20179,543,381'Semiconductor structure and manufacturing method of the same'20179,536,826'Fin field effect transistor (finFET) device structure with interconnect structure'20179,530,887'Fin-type field effect transistor device and manufacturing method thereof'20169,508,830'Method of forming FinFET'20169,508,719'Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the same'20169,502,567'Semiconductor fin structure with extending gate structure'20169,496,363'FinFET isolation structure and method for fabricating the same'20169,496,372'Method of making a FinFET device'20169,490,176'Method and structure for FinFET isolation'20169,461,044'Fin field effect transistor, semiconductor device and fabricating method thereof'20169,460,968'Fin shape for fin field-effect transistors and method of forming'20169,461,043'Semiconductor device and manufacturing method thereof'20169,450,099'Structure and formation method of semiconductor device structure'20169,406,680'Semiconductor device including fin structures and manufacturing method thereof'20169,401,415'Fin field effect transistor (FinFET) device and method for forming the same'20169,391,205'Gate last semiconductor structure and method for forming the same'20169,384,988'Gate protection caps and method of forming the same'20169,331,074'Semiconductor device and manufacturing method thereof'20169,306,037'Dummy gate electrode of semiconductor device'20169,245,883'Method of making a FinFET device'20169,153,440'Method of forming a semiconductor device'20159,041,125'Fin shape for fin field-effect transistors and method of forming'20158,803,241'Dummy gate electrode of semiconductor device'20148,722,541'Double patterning method for semiconductor devices'20148,163,625'Method for fabricating an isolation structure'20128,034,722'Method of forming dual damascene semiconductor device'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (9)· patent assignee history
2011–2012Based in Tainan, TW· patent location history
2012–2015Patents assigned to LIN CHIH-HAN (4)· patent assignee history
2012–2015Patents assigned to CHEN RYAN CHIA-JEN (2)· patent assignee history
2014–2015Patents assigned to CHANG MING-CHING (2)· patent assignee history
2014–2018Based in Zhubei City, TW· patent location history
2015–2020Based in Hsinchu, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (227)· patent assignee history
2017Based in New Taipei, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 227 | 2016–2020 |
| TAIWAN SEMICONDUCTOR MFG | 9 | 2011–2016 |
| LIN CHIH-HANself | 4 | 2012–2015 |
| CHANG MING-CHING | 2 | 2014–2015 |
| CHEN RYAN CHIA-JEN | 2 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 230 | 2015–2020 |
| Zhubei City, TW | 4 | 2014–2018 |
| Tainan, TW | 2 | 2011–2012 |
| New Taipei, TW | 1 | 2017 |