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Inventor

Koichiro Inomata

Inventor
Yokohama, JP

Overview

70→
Patents
1980–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 70 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Fprimary
H01FMagnets18%
H10NElectric solid-state devices not otherwise provided for11%
B82YSpecific uses or applications of nanostructures11%
G11BInformation storage based on relative movement between record carrier and transducer9%
Y10TTechnical subjects covered by former us classification8%
G01RMeasuring electric variables8%
G11CStatic stores7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
C22CAlloys4%
H10BElectronic memory devices4%
PatentTitleYear
10,832,719Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same202010,199,063Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same20198,866,243'Ferromagnetic tunnel junction structure and magnetoresistive element using the same'20148,575,674'Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same'20137,745,004'Polymer-coated magnetic particle and magnetic material for absorbing electromagnetic waves'20107,593,193'Magnetoresistive element and magnetic memory device'20097,345,852'Magnetoresistive element and magnetic memory device'20087,038,894'Magnetoresistive element and magnetic memory device'20066,992,155'Method for producing magnetic particle, magnetic particle and magnetic material'20066,987,653'Magnetoresistive element and magnetic memory device'20066,868,002'Magnetic memory with reduced write current'20056,751,074'Magnetic memory having antiferromagnetically coupled recording layer'20046,707,711'Magnetic memory with reduced write current'20046,670,546'Radio wave absorber'20036,611,405'Magnetoresistive element and magnetic memory device'20036,556,473'Magnetic memory with reduced write current'20036,473,336'Magnetic memory device'20026,381,171'Magnetic element, magnetic read head, magnetic storage device, magnetic memory device'20026,365,286'Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage system'20026,208,000'Semiconductor element having charge accumulating layer under gate electrode and using single electron phenomenon'20016,114,056'Magnetic element, and magnetic head and magnetic memory device using thereof'20006,069,820'Spin dependent conduction device'20005,973,334'Magnetic device and magnetic sensor using the same'19995,773,156'Magnetoresistance effect element'19985,747,859'Magnetic device and magnetic sensor using the same'19985,723,978'Photo-inducible magnetic exchange coupling device'19985,716,719'Magnetoresistance effect element'19985,700,588'Magnetoresistance effect element'19975,616,370'Artificial multilayer and method of manufacturing the same'19975,607,781'Oxide film with preferred crystal orientation, method of manufacturing the same, and magneto-optical recording medium'19975,585,196'Magnetoresistance effect element'19965,578,385'Magnetoresistance effect element'19965,534,355'Artificial multilayer and method of manufacturing the same'19965,523,172'Magnetoresistance effect element'19965,500,633'Magnetoresistance effect element'19965,365,212'Magnetoresistance effect element'19945,304,975'Magnetoresistance effect element and magnetoresistance effect sensor'1994RE034039'Torque sensor for detecting a shaft torque and an electric machine in which the torque sensor is mounted'19925,071,493'Rare earth-iron-boron-based permanent magnet'19915,068,050'Amorphous oxide magnetic material'19914,985,072'Polycrystalline magnetic substances for magnetic refrigeration and a method of manufacturing the same'19914,975,213'Resin-bonded rare earth-iron-boron magnet'19904,935,075'Permanent magnet'19904,878,964'Permanent magnetic alloy and method of manufacturing the same'19894,859,254'Permanent magnet'19894,859,256'High permeability amorphous magnetic material'19894,849,017'Magnetic refrigerant for magnetic refrigeration'19894,827,235'Magnetic field generator useful for a magnetic resonance imaging instrument'19894,793,874'Permanent magnetic alloy and method of manufacturing the same'19884,762,008'Torque detecting apparatus'19884,750,371'Torque sensor for detecting a shaft torque and an electric machine in which the torque sensor is mounted'19884,664,724'Permanent magnetic alloy and method of manufacturing the same'19874,631,796'Torque sensor and method for manufacturing the same'19864,627,298'Torque sensor of the noncontact type'19864,590,807'Torque sensor of noncontact type'19864,578,125'Permanent magnet'19864,569,775'Method for manufacturing a magnetic powder for high density magnetic recording'19864,537,517'Temperature sensitive amorphous magnetic alloy'19854,517,017'Temperature sensitive amorphous magnetic alloy'19854,504,327'Corrosion-resistant and wear-resistant magnetic amorphous alloy and a method for preparing the same'19854,473,417'Amorphous alloy for magnetic core material'19844,462,826'Low-loss amorphous alloy'19844,428,416'Method of manufacturing a multi-layer amorphous alloy'19844,424,459'High frequency switching circuit'19844,399,376'High frequency switching circuit'19834,385,932'Amorphous magnetic alloy'19834,368,447'Rolled core'19834,341,648'Method for manufacturing magnetic powder for high density magnetic recording'19824,225,339'Amorphous alloy of high magnetic permeability'19804,211,585'Samarium-cobalt-copper-iron-titanium permanent magnets'1980

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1980–1986Patents assigned to TOKYO SHIBAURA ELECTRIC CO (16)· patent assignee history
1980–2009Based in Yokohama, JP· patent location history
1986–2009Patents assigned to TOSHIBA KK (46)· patent assignee history
1990–2002Based in Kanagawa, JP· patent location history
2002–2005Based in Sendai, JP· patent location history
2003–2010Patents assigned to SONY CORP (3)· patent assignee history
2003–2010Based in Miyagi, JP· patent location history
2013–2014Patents assigned to INOMATA KOICHIRO (2)· patent assignee history
2013–2014Patents assigned to NAT INST FOR MATERIALS SCIENCE (2)· patent assignee history
2013–2020Based in Ibaraki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK461986–2009
TOKYO SHIBAURA ELECTRIC CO161980–1986
SONY CORP32003–2010
INOMATA KOICHIROself22013–2014
NAT INST FOR MATERIALS SCIENCE22013–2014
Locations
LocationPatentsSpan
Yokohama, JP501980–2009
Kanagawa, JP51990–2002
Ibaraki, JP42013–2020
Sendai, JP42002–2005
Miyagi, JP32003–2010