Inventor
Rupert Krautbauer
Inventor
Portland, OR, US
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
C30BSingle-crystal growth22%
H10DInorganic electric semiconductor devices22%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
Y10TTechnical subjects covered by former us classification11%
PatentTitleYear
8,449,675'Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer'20137,341,787'Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers'20087,202,146'Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2013Patents assigned to SILTRONIC AG (3)· patent assignee history
2007Based in Muehldorf, DE· patent location history
2008Based in Mühldorf, DE· patent location history
2013Patents assigned to HUETTL GERHARD (1)· patent assignee history
2013Patents assigned to KRAUTBAUER RUPERT (1)· patent assignee history
2013Patents assigned to LENZ ANDREJ (1)· patent assignee history
2013Patents assigned to MAYER ERWIN-PETER (1)· patent assignee history
2013Based in Portland, OR, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SILTRONIC AG | 3 | 2007–2013 |
| HUETTL GERHARD | 1 | 2013 |
| KRAUTBAUER RUPERTself | 1 | 2013 |
| LENZ ANDREJ | 1 | 2013 |
| MAYER ERWIN-PETER | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Portland, OR, US | 1 | 2013 |
| Mühldorf, DE | 1 | 2008 |
| Muehldorf, DE | 1 | 2007 |