Inventor

Richard Lewington

Inventor

Hayward, CA, US

Overview

17→

Patents

2008–2019

Patent span

Electricity

Primary field (CPC H)

Patents· 17 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary

H01JElectric discharge tubes or discharge lamps37%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices12%

C23CCoating metallic material7%

H01LSemiconductor devices5%

A63HToys, e.g. tops, dolls, hoops or building blocks2%

B43KImplements for writing or drawing2%

C04BLime, magnesia2%

C23FNon-mechanical removal of metallic material from surface2%

PatentTitleYear

10,170,280Plasma reactor having an array of plural individually controlled gas injectors arranged along a circular side wall2019 9,218,944'Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors'2015 8,568,553'Method and apparatus for photomask plasma etching'2013 8,017,029'Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside'2011 8,012,366'Process for etching a transparent workpiece including backside endpoint detection steps'2011 8,002,946'Mask etch plasma reactor with cathode providing a uniform distribution of etch rate'2011 7,976,671'Mask etch plasma reactor with variable process gas distribution'2011 7,967,930'Plasma reactor for processing a workpiece and having a tunable cathode'2011 7,964,818'Method and apparatus for photomask etching'2011 7,943,005'Method and apparatus for photomask plasma etching'2011 7,909,961'Method and apparatus for photomask plasma etching'2011 7,846,848'Cluster tool with integrated metrology chamber for transparent substrates'2010 7,601,272'Method and apparatus for integrating metrology with etch processing'2009 7,520,999'Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another'2009 7,504,041'Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator'2009 7,431,797'Plasma reactor with a dynamically adjustable plasma source power applicator'2008 7,419,551'Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another'2008

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2008–2019Patents assigned to APPLIED MATERIALS INC (17)· patent assignee history

2008–2019Based in Hayward, CA, US· patent location history

2013–2015Patents assigned to CHANDRACHOOD MADHAVI R (2)· patent assignee history

2013–2015Patents assigned to KUMAR AJAY (2)· patent assignee history

2013–2015Patents assigned to LEWINGTON RICHARD (2)· patent assignee history

2013–2015Patents assigned to PANAYIL SHEEBA J (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
APPLIED MATERIALS INC	17	2008–2019
CHANDRACHOOD MADHAVI R	2	2013–2015
KUMAR AJAY	2	2013–2015
LEWINGTON RICHARDself	2	2013–2015
PANAYIL SHEEBA J	2	2013–2015

Locations

Location	Patents	Span
Hayward, California, US	17	2008–2019