Inventor
Ryo Sakamoto
Inventor
Tokyo, JP
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10DInorganic electric semiconductor devices8%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
G06TImage data processing or generation, in general6%
C12QMeasuring or testing processes involving enzymes, nucleic acids or microorganisms4%
C22CAlloys4%
C22FChanging the physical structure of non-ferrous metals and non-ferrous alloys4%
C23CCoating metallic material4%
G06KGraphical data reading4%
G11BInformation storage based on relative movement between record carrier and transducer4%
PatentTitleYear
11,075,003Assistance apparatus for assisting interpretation report creation and method for controlling the same202111,037,594Aluminum-alloy substrate for magnetic disk, method for manufacturing same and magnetic disk employing said aluminum-alloy substrate for magnetic disk202110,787,571Oxidation color developable compound and oxidation color development reagent202010,787,473PH responsive fluorescent compound, composition for detecting mitophagy using same, and method for detecting mitophagy within cells202010,767,247Aluminum alloy magnetic disk substrate and method for producing same202010,579,895Information processing apparatus, extraction method, and medium202010,475,184Medical image processing apparatus and method2019D0863238Light emitting diode chip201910,090,568Battery assembly20188,946,863'Epitaxial substrate for electronic device comprising a high resistance single crystal substrate on a low resistance single crystal substrate, and method of manufacturing'20158,904,938'Blasting cartridge, blasting apparatus, and blasting method'20148,710,489'Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same'20148,426,893'Epitaxial substrate for electronic device and method of producing the same'20138,344,356'Semiconductor material, method of making the same, and semiconductor device'20138,115,193'Vertical resonator type light emitting diode'20128,044,439'Light-emitting device and manufacturing method of the same'20117,989,799'Surface light emitting element'20117,485,705'Water-soluble tetrazolium compounds'20096,336,970'Surface preparation method and semiconductor device'20025,462,821'Gallium based active material for the negative electrode, a negative electrode using the same, and batteries using said negative electrode'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2021Based in Tokyo, JP· patent location history
2009–2020Based in Kumamoto, JP· patent location history
2011–2019Patents assigned to DOWA ELECTRONICS MATERIALS CO LTD (8)· patent assignee history
2011–2013Based in Chiyoda-ku, JP· patent location history
2012–2015Patents assigned to SAKAMOTO RYO (6)· patent assignee history
2013–2015Patents assigned to IKUTA TETSUYA (3)· patent assignee history
2013–2015Patents assigned to SHIBATA TOMOHIKO (3)· patent assignee history
2018Based in Isehara, JP· patent location history
2019–2021Patents assigned to CANON KK (3)· patent assignee history
2019–2021Based in Kyoto, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| DOWA ELECTRONICS MATERIALS CO LTD | 8 | 2011–2019 |
| SAKAMOTO RYOself | 6 | 2012–2015 |
| CANON KK | 3 | 2019–2021 |
| IKUTA TETSUYA | 3 | 2013–2015 |
| SHIBATA TOMOHIKO | 3 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 7 | 1995–2021 |
| Chiyoda-ku, JP | 4 | 2011–2013 |
| Kyoto, JP | 3 | 2019–2021 |
| Kumamoto, JP | 3 | 2009–2020 |
| Isehara, JP | 1 | 2018 |