Inventor

Hye-Jung Choi

Inventor
Icheon-si, KR

Overview

14→
Patents
2006–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 14 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G06Fprimary
G06FElectric digital data processing14%
G11CStatic stores12%
H01LSemiconductor devices12%
H04LTransmission of digital information, e.g. telegraphic communication12%
H10BElectronic memory devices12%
H10NElectric solid-state devices not otherwise provided for12%
G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
PatentTitleYear
10,861,503Electronic device202010,855,630Systems and methods for initiating external actions via a group-based communication system202010,825,519Electronic device and method of operating memory cell in the electronic device202010,783,981Semiconductor memory capable of reducing an initial turn-on voltage of a memory cell using a stress pulse in a test mode, and method for driving the same202010,778,734Systems and methods for initiating processing actions utilizing automatically generated data of a group-based communication system202010,771,589Systems and methods for initiating processing actions utilizing automatically generated data of a group-based communication system202010,701,003Systems and methods for initiating external actions via a group-based communication system202010,685,733Electronic device for changing short-type defective memory cell to open-type defective memory cell by applying stress pulse202010,348,655Systems and methods for initiating external actions via a group-based communication system201910,115,461Electronic device using resistive memory element and a recovery operation to compensate for threshold drift20189,293,705'Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device'20169,184,378'Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device'20158,987,695'Variable resistance memory device and method for fabricating the same'20157,079,237'Apparatus for inspecting a wafer'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006Patents assigned to SAMSUNG ELECTRONICS CO LTD (1)· patent assignee history
2006Based in Incheon, KR· patent location history
2015–2020Patents assigned to SK HYNIX INC (8)· patent assignee history
2015–2020Based in Icheon-si, KR· patent location history
2019–2020Patents assigned to SLACK TECH INC (5)· patent assignee history
2019–2020Based in San Mateo, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SK HYNIX INC82015–2020
SLACK TECH INC52019–2020
SAMSUNG ELECTRONICS CO LTD12006
Locations
LocationPatentsSpan
Icheon-si, KR82015–2020
San Mateo, California, US52019–2020
Incheon, KR12006