Inventor
Chueh-Yang Liu
Inventor
Tainan, TW
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10DInorganic electric semiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
F03BMachines or engines for liquids1%
F03DWind motors1%
F05BIndexing scheme relating to wind, spring, weight, inertia or like motors, to machines or engines for liquids covered by subclasses f03b, f03d and f03g1%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution1%
PatentTitleYear
11,060,500Ducted bidirectional tidal current power station system202110,651,174FinFET structure and fabricating method of gate structure202010,505,041Semiconductor device having epitaxial layer with planar surface and protrusions201910,340,268FinFET structure and fabricating method of gate structure201910,312,084Semiconductor device and fabrication method thereof201910,199,485Semiconductor device including quantum wires201910,128,366Field-effect transistor201810,079,143Method of forming semiconductor device having wick structure20189,966,266Apparatus for semiconductor wafer treatment and semiconductor wafer treatment20189,960,084Method for forming semiconductor device20189,929,264'Field-effect transistor and method of making the same'20189,899,520'Method for fabricating semiconductor device'20189,871,113'Semiconductor process'20189,793,105'Fabricating method of fin field effect transistor (FinFET)'20179,748,111'Method of fabricating semiconductor structure using planarization process and cleaning process'20179,741,818'Manufacturing method of semiconductor structure for improving quality of epitaxial layers'20179,741,572'Method of forming oxide layer'20179,728,397'Semiconductor device having the insulating layers cover a bottom portion of the fin shaped structure'20179,716,165'Field-effect transistor and method of making the same'20179,646,889'Method of removing a hard mask layer on a gate structure while forming a protective layer on the surface of a substrate'20179,633,904'Method for manufacturing semiconductor device with epitaxial structure'20179,627,534'Semiconductor MOS device having a dense oxide film on a spacer'20179,613,808'Method of forming multilayer hard mask with treatment for removing impurities and forming dangling bonds'20179,570,315'Method of interfacial oxide layer formation in semiconductor device'20179,530,886'Semiconductor device with epitaxial structure and manufacturing method thereof'20169,466,480'Cleaning process for oxide'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2020Patents assigned to UNITED MICROELECTRONICS CORP (25)· patent assignee history
2016–2020Based in Tainan, TW· patent location history
2021Patents assigned to HANGZHOU JIANGHE HYDRO ELECTRICAL SCI & TECH CO (1)· patent assignee history
2021Patents assigned to HANGZHOU JIANGHE HYDRO ELECTRICAL SCIENCE& TECH CO LTD (1)· patent assignee history
2021Based in Zhejiang, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 25 | 2016–2020 |
| HANGZHOU JIANGHE HYDRO ELECTRICAL SCI & TECH CO | 1 | 2021 |
| HANGZHOU JIANGHE HYDRO ELECTRICAL SCIENCE& TECH CO LTD | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 25 | 2016–2020 |
| Zhejiang, CN | 1 | 2021 |