Inventor
Myoungbum Lee
Inventor
Seoul, KR
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices33%
H10DInorganic electric semiconductor devices22%
H01LSemiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
PatentTitleYear
10,546,872Nonvolatile memory device and method for fabricating the same20209,735,170'Nonvolatile memory device and method for fabricating the same'20179,716,102'Semiconductor device'20179,711,523'Semiconductor devices'20179,466,612'Semiconductor memory devices and methods of forming the same'20169,373,628'Semiconductor memory device and method of fabricating the same'20169,356,033'Three-dimensional semiconductor memory devices and methods of forming the same'20169,312,270'Methods of manufacturing three-dimensional semiconductor memory devices'20169,293,335'Method of fabricating semiconductor device'20169,281,361'Semiconductor devices and methods of fabricating the same'20169,257,441'Semiconductor memory devices and methods of forming the same'20169,245,839'Nonvolatile memory device and method for fabricating the same'20169,224,753'Semiconductor memory device and method of fabricating the same'20159,196,630'Semiconductor devices having carbon-contained porous insulation over gate stack structures'20159,171,860'Three-dimensional nonvolatile memory device'20158,980,731'Methods of forming a semiconductor device'20158,883,611'Methods of fabricating semiconductor devices having air gaps in dielectric layers'20148,786,007'Three-dimensional nonvolatile memory device'20148,592,873'Semiconductor memory devices and methods of forming the same'20138,541,831'Nonvolatile memory device and method for fabricating the same'20138,507,918'Multilayer semiconductor devices with channel patterns having a graded grain structure'20138,460,998'Method of fabricating semiconductor device'20138,415,742'Semiconductor memory device and method of forming the same'20138,329,537'Method for fabricating rewritable three-dimensional memory device'20128,283,719'Nonvolatile memory device having a fixed charge layer'20128,173,533'Semiconductor memory device and method of forming the same'20128,084,819'Semiconductor memory device having insulation patterns and cell gate patterns'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (27)· patent assignee history
2011–2016Patents assigned to LEE MYOUNGBUM (16)· patent assignee history
2011–2016Patents assigned to KIM JINGYUN (8)· patent assignee history
2011–2016Patents assigned to HWANG KIHYUN (7)· patent assignee history
2011–2020Based in Seoul, KR· patent location history
2012–2016Patents assigned to SHIN SEUNGMOK (3)· patent assignee history
2016Based in Hwasung, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 27 | 2011–2020 |
| LEE MYOUNGBUMself | 16 | 2011–2016 |
| KIM JINGYUN | 8 | 2011–2016 |
| HWANG KIHYUN | 7 | 2011–2016 |
| SHIN SEUNGMOK | 3 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 26 | 2011–2020 |
| Hwasung, KR | 1 | 2016 |