Inventor
Shunji Kishida
Inventor
Tokyo, JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material38%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
G01BMeasuring length, thickness or similar linear dimensions13%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
PatentTitleYear
5,793,479'Thin-film formation device and method'19985,545,591'Method for forming an aluminum film used as an interconnect in a semiconductor device'19965,393,577'Method for forming a patterned layer by selective chemical vapor deposition'19954,976,930'Method and apparatus for inducing photochemical reaction'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–1998Patents assigned to NEC CORP (4)· patent assignee history
1990–1998Based in Tokyo, JP· patent location history
1998Patents assigned to ANELVA CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 4 | 1990–1998 |
| ANELVA CORP | 1 | 1998 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 4 | 1990–1998 |