Inventor
CHANDRASHEKHAR PRAKASH SAVANT
Inventor
TW
Overview
Patents· 54 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices32%
H10DInorganic electric semiconductor devices32%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
B82YSpecific uses or applications of nanostructures10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H10BElectronic memory devices1%
C23CCoating metallic material1%
PatentTitleYear
12,518,971Method of manufacturing a semiconductor device and a semiconductor device202612,469,710Method of manufacturing a semiconductor device202512,453,118Inter-layer dielectrics and etch stop layers for transistor source/drain regions202512,444,598Gate structure fabrication techniques for reducing gate structure warpage202512,424,491Semiconductor device with low-galvanic corrosion structures, and method of making same202512,414,356Gate structure and method of forming same202512,402,388Method of manufacturing semiconductor devices and semiconductor devices202512,342,580Method of manufacturing a semiconductor device and a semiconductor device202512,336,265Metal gate structures for field effect transistors202512,328,940Method of manufacturing semiconductor devices and semiconductor devices202512,315,730Semiconductor devices with metal intercalated high-k capping202512,308,366Method of manufacturing semiconductor devices and semiconductor devices202512,300,549Gate stack treatment202512,255,100Inner filler layer for multi-patterned metal gate for nanostructure transistor202512,243,919Method and structure for metal gate boundary isolation202512,166,041Semiconductor device and method202412,154,829Method of manufacturing semiconductor devices and semiconductor devices202412,154,831Gate structure of a semiconductor device and method of forming same202412,142,682Method of manufacturing semiconductor devices and semiconductor devices202412,132,051Method of manufacturing semiconductor devices and semiconductor devices202412,125,892Transistors with reduced defect and methods of forming same202412,087,839Transistor gate electrodes with voids202412,074,028Semiconductor device and manufacturing method thereof202412,033,900Trench isolation with conductive structures202412,027,376Method for cut metal gate etch dimensional control202411,978,675Method of manufacturing semiconductor devices and semiconductor devices202411,972,982Method of manufacturing a semiconductor device202411,955,485Method of manufacturing semiconductor devices and semiconductor devices202411,908,915Method of manufacturing semiconductor devices and semiconductor devices202411,862,638Semiconductor device and method202411,837,507Gate structure and method of forming same202311,817,500Method of manufacturing a semiconductor device and a semiconductor device202311,784,187Method of manufacturing semiconductor devices and semiconductor devices202311,777,014Controlled doping in a gate dielectric layer202311,749,566Inner filler layer for multi-patterned metal gate for nanostructure transistor202311,688,648Gate structure of a semiconductor device and method of forming same202311,670,553Gate stack treatment202311,658,216Method and structure for metal gate boundary isolation202311,640,983Semiconductor device and method202311,615,985Semiconductor device with low-galvanic corrosion structures, and method of making same202311,557,649Method of manufacturing semiconductor devices and semiconductor devices202311,552,178Metal gate structures for field effect transistors202311,522,062Method of manufacturing an etch stop layer and an inter-layer dielectric on a source/drain region202211,515,162Method of manufacturing a semiconductor device and a semiconductor device202211,495,463Semiconductor device and manufacturing method thereof202211,489,075Method of manufacturing a semiconductor device and a semiconductor device202211,430,700Trench isolation with conductive structures202211,417,571Dopant profile control in gate structures for semiconductor devices202211,404,327Gate structure and method of forming same202211,404,322Method of manufacturing a semiconductor device202211,342,434Method of manufacturing semiconductor devices and semiconductor devices202211,264,478Transistors with reduced defect and methods forming same202211,251,092Gate structure of a semiconductor device and method of forming same202211,183,431Method of manufacturing semiconductor devices and semiconductor devices2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (54)· patent assignee history
2021–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 54 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 54 | 2021–2026 |