Inventor
Mu-Hui Park
Inventor
Hwaseong-si, KR
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores65%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H01LSemiconductor devices6%
H10BElectronic memory devices6%
H10NElectric solid-state devices not otherwise provided for6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
A47LDomestic washing or cleaning3%
PatentTitleYear
10,784,311Three-dimensional semiconductor memory devices202010,770,138Method of operating resistive memory device reducing read disturbance202010,546,637Method of operating resistive memory device reducing read disturbance202010,388,699Three-dimensional semiconductor memory devices201910,102,897Memory device and method of operating the same201810,083,746Memory device and method for operating memory device20189,805,807'Operation method operating nonvolatile memory device having plurality of memory blocks'20179,728,254'Nonvolatile memory device and method for sensing the same'20179,627,056'Resistive memory device and memory system including resistive memory device'20179,478,302'Nonvolatile memory device and method for sensing the same'20169,368,201'Nonvolatile memory device having resistive memory cell and method sensing data in same'20169,361,977'Reliable read operation for nonvolatile memory device with resistance material that reads data based on reference current'20169,058,874'Sensing circuits and phase change memory devices including the same'20158,320,171'Phase change memory devices and memory systems including the same'20128,259,511'Phase change memory device generating program current and method thereof'20127,986,551'Phase change random access memory device'20117,936,612'Phase change memory device generating program current and method thereof'20117,672,156'Phase change random access memory device'20107,656,719'Phase change memory device generating program current and method thereof'20107,639,558'Phase change random access memory (PRAM) device'20097,548,467'Bias voltage generator and method generating bias voltage for semiconductor memory device'20097,349,245'Non-volatile phase-change memory device and associated program-suspend-read operation'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (22)· patent assignee history
2008–2012Based in Seoul, KR· patent location history
2009–2010Based in Seocho-gu, KR· patent location history
2012Patents assigned to PARK MU-HUI (2)· patent assignee history
2012Patents assigned to CHO BEAK-HYUNG (1)· patent assignee history
2012Patents assigned to CHO WOO-YEONG (1)· patent assignee history
2015Based in Ansan-si, KR· patent location history
2016–2020Based in Hwaseong-si, KR· patent location history
2017Based in Yongin-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 22 | 2008–2020 |
| PARK MU-HUIself | 2 | 2012 |
| CHO BEAK-HYUNG | 1 | 2012 |
| CHO WOO-YEONG | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hwaseong-si, KR | 11 | 2016–2020 |
| Seoul, KR | 7 | 2008–2012 |
| Seocho-gu, KR | 2 | 2009–2010 |
| Yongin-si, KR | 1 | 2017 |
| Ansan-si, KR | 1 | 2015 |