LexDanaLexDanabeta
Inventor

Hiroyuki Ohmori

Inventor
Kanagawa, JP

Overview

161→
Patents
1991–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 161 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores22%
H10NElectric solid-state devices not otherwise provided for19%
H10BElectronic memory devices17%
H01LSemiconductor devices13%
H01FMagnets8%
G11BInformation storage based on relative movement between record carrier and transducer6%
B82YSpecific uses or applications of nanostructures5%
H10DInorganic electric semiconductor devices3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
G03GElectrography1%
PatentTitleYear
11,069,389Magnetic memory and magnetic memory recording method202111,037,612Magnetic memory and magnetic memory recording method202110,873,022Magnetic element202010,861,521Magnetic storage element202010,861,522Storage device, manufacturing method therefor, and storage apparatus202010,862,024Storage element and memory202010,854,256Storage element and storage apparatus202010,783,932Magnetic memory, semiconductor device, electronic device, and method of reading magnetic memory202010,706,903Nonvolatile memory cell, memory cell unit, and information writing method, and electronic apparatus202010,692,521Storage element202010,672,420Storage device, storage apparatus, magnetic head, and electronic apparatus202010,665,775Memory element and memory device202010,629,805Magnetic element202010,580,471Storage element and storage apparatus202010,566,523Storage element and memory202010,475,474Storage element201910,475,989Storage element and memory201910,375,698Memory system201910,374,146Memory element and memory device201910,354,708Storage device, manufacturing method therefor, and storage apparatus201910,332,577Storage element and storage apparatus201910,217,501Memory element and memory apparatus201910,199,569Magnetic element201910,192,600Storage element201910,128,436Storage element and memory201810,128,435Memory element and memory device201810,121,963Storage element and memory201810,069,062Magnetoresistive element20189,997,698Storage element and storage apparatus20189,997,179Storage element, storage apparatus, and magnetic head20189,984,735Memory element and memory apparatus20189,978,933Storage element and memory20189,917,248'Memory element, memory apparatus'20189,875,779Storage element and memory20189,847,161Multilayer magnetic storage element and storage device20179,818,932'Storage element, storage device, and magnetic head'20179,767,874'Memory apparatus and memory device'20179,748,470'Storage element and storage apparatus'20179,735,343'Magnetic memory device and element'20179,728,715'Storage element and memory'20179,728,716'Storage element and memory'20179,634,239'Magnetic element'20179,627,053'Memory device and access method'20179,608,196'Storage element and storage device'20179,553,255'Memory element, memory apparatus'20179,530,958'Magnetoresistive element'20169,515,254'Storage element, memory and electronic apparatus'20169,484,528'Memory element and memory apparatus'20169,478,731'Storage cell, storage device, and magnetic head'20169,472,751'Storage element, method for manufacturing storage element, and memory'20169,444,034'Storage element and storage apparatus'20169,437,267'Storage element and memory'20169,424,903'Memory apparatus and memory device'20169,397,288'Storage element, storage device, method of manufacturing storage element, and magnetic head'20169,378,794'Storage element and memory'20169,356,230'Perpendicular magnetization storage element and storage device'20169,343,657'Storage element, storage apparatus, and magnetic head'20169,337,416'Memory element and memory apparatus with a plurality of magnetic layers and an oxide layer'20169,331,270'Magnetic memory element and memory apparatus having multiple magnetization directions'20169,324,935'Storage element and storage device'20169,324,940'Storage element, memory and electronic apparatus'20169,324,424'Memory device and access method'20169,299,916'Memory element and memory device'20169,293,693'Memory element and memory device'20169,293,692'Storage element and memory'20169,287,493'Storage element and memory'20169,257,635'Memory element and memory device'20169,251,057'Nonvolatile cache memory, processing method of nonvolatile cache memory, and computer system'20169,224,942'Memory element and memory device'20159,196,336'Storage cell, storage device, and magnetic head'20159,196,824'Magnetic storage element and magnetic memory'20159,196,333'Magnetic memory element and magnetic memory device'20159,172,029'Storage element and memory'20159,147,455'Storage element having laminated storage layer including magnetic layer and conductive oxide and storage device including the storage element'20159,099,642'Memory element and memory device'20159,093,211'Storage element and storage device'20159,070,462'Memory element and memory apparatus with a plurality of magnetic layers and an oxide layer'20159,053,800'Memory element and memory apparatus'20159,048,416'Memory element and memory apparatus'20159,025,362'Memory element and memory device'20158,976,578'Memory element and memory apparatus'20158,945,730'Storage element and memory device'20158,942,239'Router and method of supplying power to memory unit in the same'20158,923,037'Memory element and memory device'20148,901,531'Magnetic memory device with varying direction of magnetization and method of manufacturing the same'20148,879,315'Storage element and storage device'20148,867,266'Method for driving storage element and storage device'20148,853,806'Memory element and memory'20148,854,876'Perpendicular magnetization storage element and storage device'20148,842,465'Memory element and memory apparatus'20148,829,631'Memory element and memory device'20148,809,978'Magnetic memory element and memory apparatus having multiple magnetization directions'20148,760,884'Portable information apparatus'20148,750,035'Memory element and memory device'20148,743,594'Memory element and memory device'20148,742,519'Magnetic storage element and magnetic memory'20148,729,649'Magnetic memory device and method of manufacturing the same'20148,699,264'Memory element and memory apparatus'20148,692,341'Storage element and storage device'20148,693,239'Memory element and memory device'20148,637,947'Memory element and memory apparatus'20148,625,342'Storage element and storage device'20148,611,139'Memory element and memory device'20138,598,671'Storage element, method for manufacturing storage element, and memory'20138,575,711'Storage element and memory'20138,565,013'Storage element and storage device'20138,559,219'Storage element and memory device'20138,546,897'Magnetic memory element'20138,547,731'Memory device having a magnetic layer with a perpendicular direction of magnetization relative to a direction of magnetization of a fixed magnetization layer'20138,497,139'Magnetic memory device and method of manufacturing the same'20138,472,243'Storage apparatus'20138,455,967'Memory element and memory device'20138,455,968'Storage element and memory device'20138,445,980'Memory element and memory device'20138,441,082'Memory element and memory'20138,436,438'Memory element and memory device'20138,437,180'Memory and write control method'20138,411,499'Recording method for magnetic memory device'20138,351,603'Random number generating device, random number generating method, and security chip'20138,344,467'Storage element and storage device'20138,339,840'Storage element and memory'20128,331,136'Recording method of nonvolatile memory and nonvolatile memory'20128,248,847'Information storage element and method for driving the same'20128,238,150'Information storage element and method of writing/reading information into/from information storage element'20128,194,443'Memory device and memory'20128,169,818'Recording method for magnetic memory device'20128,159,865'Information storage element and method of writing/reading information into/from information storage element'20128,149,613'Resistance variable memory device'20128,089,802'Memory device and memory'20128,072,789'Resistance-change memory device'20118,018,759'Tunnel magnetic resistance effect memory'20117,881,097'Storage element and memory'20117,869,272'Memory device and memory for retaining information based on amagnetization state of a magnetic material'20117,660,153'Memory device and memory'20107,633,796'Storage element and memory'20097,616,475'Memory element and memory'20097,525,166'Memory element and memory'20097,459,737'Low current magnetic memory'20087,038,942'Magnetic storage element, recording method using the same, and magnetic storage device'20066,980,470'Magnetic storage element, recording method using the magnetic storage element'20056,954,375'Magnetic storage element, recording method using the same, and magnetic storage device'20056,920,065'Magnetic storage element, recording method using the same, and magnetic storage device'20056,596,418'Magnetic recording medium comprising an artificial lattice film containing B and O elements'20036,225,017'Electrophotographic photosensitive member, and process cartridge and electrophotographic apparatus having the electrophotographic photosensitive member'20015,875,375'Electrophotographic apparatus and process cartridge'19995,844,745'Magnetic head assembly having two heads with the magnetic layer of one head angled between 80.degree. to 100.degree. relative to the gap of the other head'19985,837,392'Soft magnetic thin film and thin film magnetic head using same'19985,796,564'Magnetic head having a recessed portion corresponding to a magnetic path and method of manufacturing the same'19985,786,103'Soft magnetic film and magnetic head employing same'19985,734,534'Magnetic head'19985,715,122'Magnetic head'19985,669,047'Charging member, electrophotographic apparatus and charging method using the same'19975,666,249'Magnetic head and method for manufacture thereof'19975,654,844'Magnetic head assembly having two heads with the magnetic layer of one head angled between 80 to 100 relative to the gap of the other head, and method and apparatus using same'19975,595,845'Electrophotographic photosensitive member, electrophotographic apparatus including same and electrophotographic apparatus unit'19975,585,983'Magnetic head'19965,430,527'Electrophotographic apparatus having cleaning width larger than charging width'19955,365,391'Magnetic reproducing head having a distributed-constant circuit type magnetic field detector'19945,298,353'Electrophotographic photosensitive member'19945,112,708'Member for charging with surface layer of N-alkoxymethylated nylon effecting charging at lower voltage'19925,008,706'Electrophotographic apparatus'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2018Based in Tokyo, JP· patent location history
1994–2020Patents assigned to SONY CORP (149)· patent assignee history
1994–2021Based in Kanagawa, JP· patent location history
1999–2001Based in Mishima, JP· patent location history
2011–2015Patents assigned to OHMORI HIROYUKI (45)· patent assignee history
2011–2015Patents assigned to HOSOMI MASANORI (43)· patent assignee history
2011–2015Patents assigned to YAMANE KAZUTAKA (43)· patent assignee history
2011–2015Patents assigned to HIGO YUTAKA (42)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SONY CORP1491994–2020
OHMORI HIROYUKIself452011–2015
HOSOMI MASANORI432011–2015
YAMANE KAZUTAKA432011–2015
HIGO YUTAKA422011–2015
Locations
LocationPatentsSpan
Kanagawa, JP1521994–2021
Tokyo, JP71991–2018
Mishima, JP21999–2001