Inventor
TungYuan Chu
Inventor
Shanghai, CN
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices56%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1033%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
PatentTitleYear
8,674,480'High voltage bipolar transistor with pseudo buried layers'20148,421,185'Parasitic vertical PNP bipolar transistor in BiCMOS process'20138,420,475'Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process'20138,420,495'Manufacturing approach for collector and a buried layer of bipolar transistor'20138,222,114'Manufacturing approach for collector and a buried layer of bipolar transistor'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2014Patents assigned to CHIU TZUYIN (5)· patent assignee history
2012–2014Patents assigned to CHU TUNGYUAN (5)· patent assignee history
2012–2014Patents assigned to FAN YUNGCHIEH (5)· patent assignee history
2012–2014Patents assigned to QIAN WENSHENG (5)· patent assignee history
2012–2014Patents assigned to SHANGHAI HUAHONG NEC ELECT CO (5)· patent assignee history
2012–2014Based in Shanghai, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHIU TZUYIN | 5 | 2012–2014 |
| CHU TUNGYUANself | 5 | 2012–2014 |
| FAN YUNGCHIEH | 5 | 2012–2014 |
| QIAN WENSHENG | 5 | 2012–2014 |
| SHANGHAI HUAHONG NEC ELECT CO | 5 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Shanghai, CN | 5 | 2012–2014 |