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Inventor

Ryosuke Motoyoshi

Inventor
Kanagawa, JP

Overview

2→
Patents
2015–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices33%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation33%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution33%
PatentTitleYear
9,508,880'Method for processing a minute structure on a surface of the silicon substrate'20169,214,587'Photoelectric conversion module and manufacturing method thereof'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2016Patents assigned to SEMICONDUCTOR ENERGY LAB (2)· patent assignee history
2015Patents assigned to ITO YOSHIAKI (1)· patent assignee history
2015Patents assigned to MAEDA YASUSHI (1)· patent assignee history
2015Patents assigned to MOTOYOSHI RYOSUKE (1)· patent assignee history
2015Patents assigned to NISHI KAZUO (1)· patent assignee history
2015–2016Based in Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMICONDUCTOR ENERGY LAB22015–2016
ITO YOSHIAKI12015
MAEDA YASUSHI12015
MOTOYOSHI RYOSUKEself12015
NISHI KAZUO12015
Locations
LocationPatentsSpan
Kanagawa, JP22015–2016