Inventor

Masatoshi Morikawa

Inventor

Hanno, JP

Overview

1993–2014

Patent span

Electricity

Primary field (CPC H)

Patents· 36 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices26%

H03FAmplifiers19%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%

H04BTransmission10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%

H03GControl of amplification5%

C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds4%

B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%

H03KPulse technique2%

PatentTitleYear

8,786,002'Semiconductor device'2014 8,482,058'Semiconductor device including a power MISFET'2013 8,232,595'Semiconductor device including a power MISFET and method of manufacturing the same'2012 8,080,831'Semiconductor device and manufacturing the same'2011 7,994,567'Semiconductor device and a method of manufacturing the same'2011 7,982,263'Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrate'2011 7,791,131'Semiconductor device and a method of manufacturing the same'2010 7,741,656'Semiconductor device and manufacturing the same'2010 7,671,381'Semiconductor device and manufacturing the same'2010 7,479,681'Multilayered semiconductor structure containing a MISFET, a resistor, a capacitor, and an inductor'2009 7,217,987'Semiconductor device and manufacturing the same'2007 7,176,523'Power mosfet having conductor plug structured contacts'2007 7,176,520'Semiconductor device and a method of manufacturing the same'2007 7,145,394'High frequency power amplifier module, and wireless communication system'2006 7,087,977'Semiconductor device including multiple wiring layers and circuits operating in different frequency bands'2006 7,045,412'Field-effect type semiconductor device for power amplifier'2006 6,897,728'High frequency power amplifier module and wireless communication system'2005 6,865,399'Mobile telephone apparatus'2005 6,815,707'Field-effect type semiconductor device for power amplifier'2004 6,797,594'Semiconductor device and method of manufacturing the same'2004 6,707,102'Semiconductor device including an insulated gate type field effect transistor and method for fabricating the same'2004 6,617,927'High frequency power amplifier module, and wireless communications system'2003 6,605,842'Semiconductor device and a method of manufacturing the same'2003 6,535,069'High-frequency power amplifier module'2003 6,528,848'Semiconductor device and a method of manufacturing the same'2003 6,492,872'High frequency power amplifying module and wireless communication apparatus'2002 6,433,639'High frequency power amplifier module and wireless communication system'2002 6,384,688'High-frequency power amplifier module'2002 6,366,788'Mobile telephone system'2002 5,847,521'Method and apparatus for driving an electric motor'1998 5,638,246'Semiconductor device having a protection circuit, and electronic system including the same'1997 5,525,687'Method for producing polyolefin'1996 5,385,991'Method for producing polyolefin'1995 5,379,230'Semiconductor integrated circuit having semiconductor output device driving external load and microprocessor unit'1995 5,310,833'Process for feeding catalyst to fluidized bed for vapor phase polymerization'1994 5,202,396'Process for feeding catalyst to fluidized bed for vapor phase polymerization'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–1996Based in Setagaya, JP· patent location history

1995–2003Patents assigned to HITACHI LTD (11)· patent assignee history

1998–2011Based in Hanno, JP· patent location history

2002–2006Patents assigned to HITACHI TOBU SEMICONDUCTOR LTD (5)· patent assignee history

2002–2013Based in Hannou, JP· patent location history

2002–2005Based in Saitama, JP· patent location history

2004–2010Patents assigned to RENESAS TECH CORP (9)· patent assignee history

2006–2011Patents assigned to RENESAS E JP SEMICONDUCTOR INC (5)· patent assignee history

2010–2014Patents assigned to RENESAS ELECTRONICS CORP (7)· patent assignee history

2014Based in Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	11	1995–2003
RENESAS TECH CORP	9	2004–2010
RENESAS ELECTRONICS CORP	7	2010–2014
HITACHI TOBU SEMICONDUCTOR LTD	5	2002–2006
RENESAS E JP SEMICONDUCTOR INC	5	2006–2011

Locations

Location	Patents	Span
Hanno, JP	14	1998–2011
Hannou, JP	11	2002–2013
Saitama, JP	4	2002–2005
Setagaya, JP	4	1993–1996
Kanagawa, JP	1	2014