Inventor

Faquir C. Jain

Inventor
Storrs, CT, US

Overview

37→
Patents
1978–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 37 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary
B82YSpecific uses or applications of nanostructures14%
H10DInorganic electric semiconductor devices11%
H01LSemiconductor devices8%
A61BDiagnosis7%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
G01NInvestigating or analysing materials by determining their chemical or physical properties5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
G11CStatic stores4%
PatentTitleYear
10,820,845Continuous assessment of biological analytes for general wellness202010,741,719Quantum dot channel (QDC) quantum dot gate transistors, memories and other devices202010,505,062High efficiency tandem solar cells and a method for fabricating same201910,041,797Fiber optic gyroscope with 3x3 and 2x2 waveguide couplers20189,936,876Robust powering of implantable biosensor platform20189,735,236'Quantum dot channel (QDC) quantum dot gate transistors, memories and other devices'20179,509,400'Circuit architecture and system for implantable multi-function and multi-analyte biosensing device'20169,494,734'Article and method for implementing electronic devices on a substrate using quantum dot layers'20169,337,924'Circuit architecture and system for implantable multi-function and multi-analyte biosensing device'20169,331,209'Nonvolatile memory and three-state FETs using cladded quantum dot gate structure'20169,287,412'Quantum dot channel (QDC) quantum dot gate transistors, memories and other devices'20169,204,839'Miniaturized implantable sensor platform having multiple devices and sub-chips'20159,166,363'Enhanced optical gain and lasing in indirect gap semiconductor thin films and nanostructures'20159,153,594'Nonvolatile memory and three-state FETs using cladded quantum dot gate structure'20159,000,417'Random access memory cells using spatial wavefunction switched field-effect transistors'20158,981,344'Twin-drain spatial wavefunction switched field-effect transistors'20158,914,090'Implantable biosensor and methods of use thereof'20148,853,667'Quantum dot gate FETs and circuits configured as biosensors and gene sequencers'20148,808,181'Miniaturized implantable sensor platform having multiple devices and sub-chips'20148,698,226'Semiconductor devices, methods of manufacture thereof and articles comprising the same'20148,608,922'Biosensor for continuous monitoring of metabolites and proteins and methods of manufacture thereof'20138,390,047'Miniaturized implantable sensor platform having multiple devices and sub-chips'20138,294,137'Twin-drain spatial wavefunction switched field-effect transistors'20127,368,370'Site-specific nanoparticle self-assembly'20087,326,303'Single-pass growth of multilayer patterned electronic and photonic devices using a scanning localized evaporation methodology (SLEM)'20087,115,168'Patterned thin-film deposition using collimating heated masked assembly'20066,992,317'Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films'20066,797,412'Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films'20046,498,360'Coupled-well structure for transport channel in field effect transistors'20025,485,014'Multiple quantum well birefringent spatial light modulator'19965,239,550'Transistor lasers'19935,212,706'Laser diode assembly with tunnel junctions and providing multiple beams'19934,955,031'Metal insulator semiconductor heterostructure lasers'19904,949,136'Submicron lightly doped field effect transistors'19904,910,163'Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system'19904,160,678'Heterojunction solar cell'19794,119,994'Heterojunction and process for fabricating same'1978

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1978–2014Patents assigned to UNIV CONNECTICUT (14)· patent assignee history
1978–2020Based in Storrs, CT, US· patent location history
1979–2016Patents assigned to JAIN FAQUIR C (8)· patent assignee history
1979Based in Stoors, CT, US· patent location history
2012–2020Patents assigned to JAIN FAQUIR CHAND (12)· patent assignee history
2013–2018Patents assigned to PAPADIMITRAKOPOULOS FOTIOS (6)· patent assignee history
2014–2018Patents assigned to OPTOELECTRONICS SYSTEMS CONSULTING INC (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNIV CONNECTICUT141978–2014
JAIN FAQUIR CHANDself122012–2020
JAIN FAQUIR Cself81979–2016
PAPADIMITRAKOPOULOS FOTIOS62013–2018
OPTOELECTRONICS SYSTEMS CONSULTING INC32014–2018
Locations
LocationPatentsSpan
Storrs, CT, US361978–2020
Stoors, CT, US11979