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Inventor

Tsuneichiro Sano

Inventor
Toyama, JP

Overview

6→
Patents
2006–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 6 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices46%
H01LSemiconductor devices23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H03FAmplifiers8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
PatentTitleYear
9,985,125Silicon carbide semiconductor device20189,543,427'Semiconductor device and method for fabricating the same'20179,269,830'Junction field effect transistor and analog circuit'20168,710,621'Bipolar transistor with diffused layer between deep trench sidewall and collector diffused layer'20147,465,969'Bipolar transistor and method for fabricating the same'20087,091,099'Bipolar transistor and method for fabricating the same'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (1)· patent assignee history
2006–2008Based in Osaka, JP· patent location history
2008–2016Patents assigned to PANASONIC CORP (3)· patent assignee history
2014–2016Based in Hyogo, JP· patent location history
2016–2018Patents assigned to PANASONIC IP MAN CO LTD (3)· patent assignee history
2017–2018Based in Toyama, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
PANASONIC CORP32008–2016
PANASONIC IP MAN CO LTD32016–2018
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12006
Locations
LocationPatentsSpan
Toyama, JP22017–2018
Hyogo, JP22014–2016
Osaka, JP22006–2008