Inventor

Sang-Won Hwang

Inventor
Suwon-si, KR

Overview

33→
Patents
2004–2018
Patent span
Physics
Primary field (CPC G)

Patents· 33 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores67%
G06FElectric digital data processing8%
A47GHousehold or table equipment6%
H10BElectronic memory devices6%
H02KDynamo-electric machines4%
A01KAnimal husbandry2%
E01CConstruction of, or surfaces for, roads, sports grounds, or the like2%
E02BHydraulic engineering2%
H03MCoding2%
PatentTitleYear
9,928,902'Methods of operating storage devices'20189,343,158'Methods of programming multi-level cell nonvolatile memory devices and devices so operating'20168,593,900'Method and apparatus for performing multi-block access operation in nonvolatile memory device'20138,446,776'Method of programming memory cells for a non-volatile memory device'20138,427,898'Method and apparatus for performing multi-block access operation in nonvolatile memory device'20138,339,851'Non-volatile memory device and method of operation therefor'20128,321,765'Method of reading data in non-volatile memory device'20128,295,092'Non-volatile memory device and memory system'20128,081,509'Non-volatile memory device and method of operation therefor'20117,974,128'Flash memory device capable of reduced programming time'20117,911,841'Non-volatile memory device and method for operating the memory device'20117,908,425'Method and device for performing cache reading'20117,817,473'Flash memory device with split string selection line structure'20107,800,950'Memory devices and methods using selective self-boost programming operations'20107,757,153'Multi-bit memory device and memory system'20107,733,695'Non-volatile memory device and method of operation therefor'20107,710,773'Nonvolatile memory devices that support virtual page storage using odd-state memory cells'20107,675,777'Non-volatile semiconductor memory device using adjacent bit lines for data transmission and method of driving the same'20107,672,160'3-level non-volatile semiconductor memory devices and related methods'20107,672,162'Non-volatile memory device, memory system, and LSB read method'20107,668,014'Non-volatile memory device and program method'20107,660,159'Method and device for programming control information'20107,636,265'Flash memory device capable of reduced programming time'20097,609,553'NAND flash memory device with burst read latency function'20097,483,301'Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same'20097,480,187'Nonvolatile semiconductor memory with low-loading bit line architecture and method of programming the same'20097,440,320'Row decoder for preventing leakage current and semiconductor memory device including the same'20087,421,557'Method and device for performing cache reading'20087,388,778'Nonvolatile memory devices that support virtual page storage using odd-state memory cells'20087,372,754'Method and apparatus for controlling slope of word line voltage in nonvolatile memory device'20087,315,480'Redundancy selector circuit for use in non-volatile memory device'20087,280,415'Flash memory device and method of repairing defects and trimming voltages'20076,826,082'Programmable memory devices with latching buffer circuit and methods for operating the same'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2018Patents assigned to SAMSUNG ELECTRONICS CO LTD (33)· patent assignee history
2004–2012Based in Gyeonggi-do, KR· patent location history
2008–2018Based in Suwon-si, KR· patent location history
2011–2016Patents assigned to HWANG SANG-WON (6)· patent assignee history
2011–2012Patents assigned to KIM DAE-YONG (2)· patent assignee history
2011–2012Patents assigned to PARK JUN-YONG (2)· patent assignee history
2012–2013Patents assigned to KIM CHAN-HO (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD332004–2018
HWANG SANG-WONself62011–2016
KIM CHAN-HO22012–2013
KIM DAE-YONG22011–2012
PARK JUN-YONG22011–2012
Locations
LocationPatentsSpan
Suwon-si, KR222008–2018
Gyeonggi-do, KR112004–2012