Inventor

Mizuki Ono

Inventor

Yokohama, JP

Overview

1995–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 36 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices49%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%

H10BElectronic memory devices9%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%

G11CStatic stores6%

G06FElectric digital data processing1%

G06NComputing arrangements based on specific computational models1%

H03KPulse technique1%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%

PatentTitleYear

10,754,920Arithmetic processing device2020 9,960,772Semiconductor device including logical blocks, wiring groups, and switch circuits2018 8,013,396'Semiconductor component and semiconductor device'2011 7,989,872'Nonvolatile semiconductor memory element and nonvolatile semiconductor memory device'2011 7,989,867'Semiconductor memory device having a semiconductor layer disposed between first and second gate electrodes'2011 7,902,594'Semiconductor component and semiconductor device'2011 7,816,242'Semiconductor device and method of manufacturing the same'2010 7,649,259'Semiconductor device including a plurality of wiring lines'2010 7,605,421'Non-volatile semiconductor memory element and method of manufacturing the same, and semiconductor integrated circuit device including the non-volatile semiconductor memory element'2009 7,465,998'Semiconductor device'2008 7,449,713'Semiconductor memory device'2008 7,422,944'Semiconductor device'2008 7,364,972'Semiconductor device'2008 7,303,965'MIS transistor and method for producing same'2007 7,282,752'MOSFET with a thin gate insulating film'2007 7,087,969'Complementary field effect transistor and its manufacturing method'2006 6,929,990'MOSFET with a thin gate insulating film'2005 6,847,084'Semiconductor device'2005 6,724,025'MOSFET having high and low dielectric materials'2004 6,690,047'MIS transistor having a large driving current and method for producing the same'2004 6,642,575'MOS transistor with vertical columnar structure'2003 6,642,560'MOSFET with a thin gate insulating film'2003 6,495,890'Field-effect transistor with multidielectric constant gate insulation layer'2002 6,410,952'MOSFET with a thin gate insulating film'2002 6,278,165'MIS transistor having a large driving current and method for producing the same'2001 6,229,164'MOSFET with a thin gate insulating film'2001 5,990,516'MOSFET with a thin gate insulating film'1999 5,965,918'Semiconductor device including field effect transistor'1999 5,955,761'Semiconductor device and manufacturing method thereof'1999 5,933,719'Method of manufacturing a semiconductor device'1999 5,903,027'MOSFET with solid phase diffusion source'1999 5,898,203'Semiconductor device having solid phase diffusion sources'1999 5,780,901'Semiconductor device with side wall conductor film'1998 5,766,965'Semiconductor device and method of manufacturing the same'1998 5,698,881'MOSFET with solid phase diffusion source'1997 5,434,440'Semiconductor device and method of manufacturing the same'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2020Patents assigned to TOSHIBA KK (35)· patent assignee history

1995–2020Based in Yokohama, JP· patent location history

1998Based in Kohoku-ku, Yokohama-shi, Kanagawa, JP· patent location history

2002Based in Zurich, CH· patent location history

2003–2006Based in Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	35	1995–2020

Locations

Location	Patents	Span
Yokohama, JP	32	1995–2020
Kanagawa, JP	2	2003–2006
Zurich, CH	1	2002
Kohoku-ku, Yokohama-shi, Kanagawa, JP	1	1998