Inventor

Chia-Hsing Chen

Inventor
Hsinchu, TW

Overview

24→
Patents
1995–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores21%
H10BElectronic memory devices21%
H10DInorganic electric semiconductor devices21%
G06FElectric digital data processing10%
H01LSemiconductor devices7%
H05KPrinted circuits5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
F04CRotary-piston, or oscillating-piston, positive-displacement machines for liquids2%
H04QSelecting2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
10,874,036Cabinet and electronic device202010,379,986Hardware monitoring system and method therefor20199,589,095'Method of converting between non-volatile memory technologies and system for implementing the method'20179,171,120'Method of converting between non-volatile memory technologies and system for implementing the method'20158,930,866'Method of converting between non-volatile memory technologies and system for implementing the method'20157,742,343'Metal oxide semiconductor device and method for operating an array structure comprising the same devices'20107,026,216'Method for fabricating nitride read-only memory'20066,784,053'Method for preventing bit line to bit line leakage in memory cell'20046,757,193'Coding method of multi-level memory cell'20046,751,127'Systems and methods for refreshing non-volatile memory'20046,639,839'Sensing method for EEPROM refresh scheme'20036,633,500'Systems and methods for refreshing a non-volatile memory using a token'20036,608,778'Method for operating a NROM device'20036,608,499'Method for compensating a threshold voltage of a neighbor bit'20036,580,135'Silicon nitride read only memory structure and method of programming and erasure'20036,576,511'Method for forming nitride read only memory'20036,562,548'Method for fabricating a mask read-only memory'20036,468,864'Method of fabricating silicon nitride read only memory'20026,466,477'Method of stabilizing reference bit of multi-bit memory cell'20026,461,949'Method for fabricating a nitride read-only-memory (NROM)'20026,455,896'Protection circuit for a memory array'20026,448,101'Method of integrating a photodiode and a CMOS transistor with a non-volatile memory'20026,040,993'Method for programming an analog/multi-level flash EEPROM'20005,454,701'Screw compressor with rotors having hyper profile'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995Based in Taipei, TW· patent location history
2000–2006Patents assigned to MACRONIX INT CO LTD (17)· patent assignee history
2000Based in I-Lan, TW· patent location history
2002–2017Based in Hsinchu, TW· patent location history
2010–2015Patents assigned to CHEN CHIA-HSING (2)· patent assignee history
2015Patents assigned to TAIWAN SEMICONDUCTOR MFG (2)· patent assignee history
2015Patents assigned to CHIH YUE-DER (1)· patent assignee history
2019Based in Shanghai, CN· patent location history
2020Patents assigned to DELTA ELECTRONICS INC (1)· patent assignee history
2020Based in Taoyuan, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MACRONIX INT CO LTD172000–2006
CHEN CHIA-HSINGself22010–2015
TAIWAN SEMICONDUCTOR MFG22015
CHIH YUE-DER12015
DELTA ELECTRONICS INC12020
Locations
LocationPatentsSpan
Hsinchu, TW202002–2017
Taoyuan, TW12020
Shanghai, CN12019
I-Lan, TW12000
Taipei, TW11995