Inventor

Nariaki Tanaka

Inventor
Kiyosu, JP

Overview

43→
Patents
1991–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 43 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices26%
G03GElectrography24%
H10DInorganic electric semiconductor devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
C07CAcyclic or carbocyclic compounds1%
PatentTitleYear
10,879,349Method for manufacturing semiconductor device and edge termination structure of semiconductor device202010,854,454Semiconductor device and method for manufacturing the same202010,832,911Semiconductor device202010,698,359Image forming apparatus and image forming method202010,635,013Image forming apparatus and image forming method202010,490,408Method for manufacturing semiconductor device201910,310,441Electrophotographic image forming apparatus, and electricity removing member used in image forming apparatus201910,256,323Method of manufacturing semiconductor device including an n type semiconductor region formed in a p type semiconductor layer201910,177,234Semiconductor device201910,153,356Method of manufacturing semiconductor device, and semiconductor device201810,153,352Semiconductor device201810,042,318Electrophotographic image forming apparatus and electricity removing member used in the same201810,026,808Semiconductor device including insulating film that includes negatively charged microcrystal20189,985,127Semiconductor device including a mesa groove and a recess groove20189,972,725Semiconductor device and manufacturing method of the same20189,711,661'Semiconductor device and manufacturing method thereof'20179,691,846'Semiconductor device including an insulating layer which includes negatively charged microcrystal'20179,685,348'Semiconductor device, method of manufacturing the same and power converter'20179,653,564'Semiconductor device and method of manufacturing the same'20179,583,580'Manufacturing method of the semiconductor device electrode having three metal layers'20179,559,218'Semiconductor device and method of manufacturing the same'20179,443,950'Semiconductor device'20169,431,260'Semiconductor device and manufacturing method of the same'20169,391,150'Semiconductor Device'20169,331,157'Semiconductor device'20169,123,635'Manufacturing method of semiconductor device'20157,395,011'Image forming apparatus with cleaning device for removing remaining toner from outer surface of photosensitive member'20086,778,796'Driving mechanism for use in image forming apparatus'20046,483,998'Electrostatic image-forming apparatus controlled to compensate for film thinning'20026,205,314'Developing roller with a coating layer, developer restricting mechanism and developing device incorporating same'20016,025,108'Non-magnetic contacting one component-type development system'20005,914,208'Electrophotographic photosensitive material'19995,842,104'Image-forming device and a process unit therefor having a guide plate with multiple openings'19985,830,615'Naphthylenediamine derivative and electrophotosensitive material using the same'19985,752,132'Process unit'19985,750,308'Electrophotographic developing method using developing bias voltage based on light decay characteristics of photosensitive material'19985,565,963'Image forming apparatus capable of changing the surface potential of a photosensitive member'19965,534,980'Electrophotographic image forming apparatus having a charge removing means'19965,530,525'Image forming apparatus'19965,530,524'Electrophotographic apparatus with photosensitive drum requiring multiple rotations for production of a copy image on one sheet and method of operating same'19965,260,157'Electrophotographic photosensitive element comprising a surface protective layer comprising an etherified melamine-formaldehyde resin'19935,060,022'Image processing equipment for setting image density conditions according to temperature'19915,024,913'Electrophotographic photosensitive material'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2000Patents assigned to MITA INDUSTRIAL CO LTD (13)· patent assignee history
1991–2020Based in Osaka, JP· patent location history
1991Based in Kishiwada, JP· patent location history
1998Based in Chuo-ku, JP· patent location history
2001–2008Patents assigned to KYOCERA MITA CORP (4)· patent assignee history
2001–2004Based in Osakasayama, JP· patent location history
2004Patents assigned to KYOCERA CORP (1)· patent assignee history
2015–2020Patents assigned to TOYODA GOSEI KK (22)· patent assignee history
2015–2020Based in Kiyosu, JP· patent location history
2018–2020Patents assigned to KYOCERA DOCUMENT SOLUTIONS INC (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOYODA GOSEI KK222015–2020
MITA INDUSTRIAL CO LTD131991–2000
KYOCERA DOCUMENT SOLUTIONS INC42018–2020
KYOCERA MITA CORP42001–2008
KYOCERA CORP12004
Locations
LocationPatentsSpan
Kiyosu, JP222015–2020
Osaka, JP171991–2020
Osakasayama, JP22001–2004
Chuo-ku, JP11998
Kishiwada, JP11991