Inventor
Sunghoi Hur
Inventor
Seoul, KR
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices31%
H10DInorganic electric semiconductor devices28%
G11CStatic stores16%
H01LSemiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
G06FElectric digital data processing2%
PatentTitleYear
10,763,222Three-dimensional semiconductor devices having vertical structures of different lengths202010,672,787Three-dimensional semiconductor device and method of manufacturing the same202010,541,248Semiconductor device, systems and methods of manufacture202010,043,816Semiconductor device, systems and methods of manufacture2018RE046623Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby20179,831,265Semiconductor device20179,768,266'Three-dimensional semiconductor memory devices and methods of fabricating the same'20179,728,549'Semiconductor devices and methods for forming the same'20179,564,499'Three-dimensional semiconductor memory devices and methods of fabricating the same'20179,536,970'Three-dimensional semiconductor memory devices and methods of fabricating the same'20179,362,306'Semiconductor device and method of fabricating the same'20169,299,718'Semiconductor device and method of fabricating the same'20169,064,597'Memory semiconductor device and method of operating the same'20159,012,977'Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics'20159,000,508'Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein'20158,933,505'Three-dimensional semiconductor memory device'20158,929,145'Nonvolatile memory device, programming method thereof and memory system including the same'20158,791,520'Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer'20148,767,473'Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby'20148,644,064'Memory semiconductor device and method of operating the same'20148,637,920'Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics'20148,625,357'Local self-boosting method of flash memory device and program method using the same'20148,603,906'Method of forming a three-dimensional semiconductor memory device comprising sub-cells, terraced structures and strapping regions'20138,570,805'Nonvolatile memory device, programming method thereof and memory system including the same'20138,546,869'Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein'20138,514,625'Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby'20138,445,954'Three-dimensional semiconductor memory device'20138,406,062'Charge recycling memory system and a charge recycling method thereof'20138,395,190'Three-dimensional semiconductor memory device'20138,368,138'Non-volatile memory devices and methods of manufacturing the same'20138,319,275'Integrated circuit memory devices having selection transistors with nonuniform threshold voltage characteristics'20128,295,097'Channel precharge and program methods of a nonvolatile memory device'20128,278,170'Methods of forming nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein'20128,110,834'Three-dimensional semiconductor devices including select gate patterns having different work function from cell gate patterns'20128,107,289'Nonvolatile memory device'20128,027,197'Nonvolatile memory device'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (36)· patent assignee history
2011–2020Based in Seoul, KR· patent location history
2012–2018Patents assigned to HUR SUNGHOI (24)· patent assignee history
2012–2015Patents assigned to SHIM SUNIL (11)· patent assignee history
2012–2015Patents assigned to KIM HANSOO (8)· patent assignee history
2012–2015Patents assigned to JANG JAEHOON (6)· patent assignee history
2012Based in Gyeonggi-do, KR· patent location history
2017Based in Gangnam-gu, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 36 | 2011–2020 |
| HUR SUNGHOIself | 24 | 2012–2018 |
| SHIM SUNIL | 11 | 2012–2015 |
| KIM HANSOO | 8 | 2012–2015 |
| JANG JAEHOON | 6 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 34 | 2011–2020 |
| Gangnam-gu, KR | 1 | 2017 |
| Gyeonggi-do, KR | 1 | 2012 |