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Inventor

Hirofumi Harada

Inventor
Chiba, JP

Overview

47→
Patents
1982–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 47 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
H01LSemiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
G05FSystems for regulating electric or magnetic variables2%
G06FElectric digital data processing2%
H04LTransmission of digital information, e.g. telegraphic communication2%
H04NPictorial communication, e.g. television2%
H10BElectronic memory devices2%
PatentTitleYear
10,756,169Semiconductor device and method of manufacturing the same202010,593,769Method for manufacturing a vertical semiconductor device202010,347,620Semiconductor device201910,276,672Vertical semiconductor device having a trench gate a base contact region201910,014,253Method of manufacturing semiconductor integrated circuit device201810,014,294Semiconductor integrated circuit device having enhancement type NMOS and depression type MOS with N-type channel impurity region and P-type impurity layer under N-type channel impurity region20189,972,625Method of manufacturing semiconductor integrated circuit device20189,893,073'Semiconductor nonvolatile memory element'20189,831,176Semiconductor integrated circuit device and method of manufacturing the same20179,791,873'Semiconductor integrated circuit device and method of regulating output voltage thereof'20179,698,147'Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors'20179,613,970'Semiconductor nonvolatile memory element'20179,461,038'Semiconductor device with resistance circuit'20169,437,669'Semiconductor device'20169,142,543'Semiconductor device having an ESD protection circuit'20159,136,145'Semiconductor integrated circuit device'20159,041,156'Semiconductor reference voltage generating device'20159,013,007'Semiconductor device having depletion type MOS transistor'20158,664,727'Semiconductor integrated circuit device'20148,604,589'Semiconductor device of polycrystalline silicon resistors'20138,551,854'Method of manufacturing a semiconductor device'20138,169,052'Semiconductor device'20128,152,227'Structure of mounting cowl top cover'20127,750,411'Semiconductor integrated circuit device'20107,602,044'Semiconductor device having polycrystalline silicon resistors'20097,485,933'Semiconductor integrated circuit device having polycrystalline silicon resistor circuit'20097,341,896'Method of manufacturing a vertical MOS transistor'20087,282,768'MOS field-effect transistor'20077,228,339'Information storage output system and information storage output service'20077,100,158'Program management apparatus, program management system, and program management method'20067,034,359'Vertical MOS transistor'20066,993,526'Electronic catalog system, catalog data printing method, server, and computer readable recording media recording program used in server'20066,921,949'Semiconductor integrated circuit device'20056,844,578'Semiconductor integrated circuit device and manufacturing method therefor'20056,720,633'High withstand voltage insulated gate N-channel field effect transistor'20046,710,402'Vertical MOS transistor and a method of manufacturing the same'20046,624,469'Vertical MOS transistor having body region formed by inclined ion implantation'20036,570,229'Semiconductor device'20036,525,376'High withstand voltage insulated gate N-channel field effect transistor'20036,511,885'Vertical MOS transistor and method of manufacturing the same'20036,495,884'Vertical MOS transistor'20026,426,258'Method of manufacturing a semiconductor integrated circuit device'20026,236,084'Semiconductor integrated circuit device having double diffusion insulated gate field effect transistor'20016,013,940'Poly-crystalline silicon film ladder resistor'20006,005,275'Semiconductor acceleration sensor with cantilever'19995,959,343'Semiconductor device'19994,356,158'Process for producing carbon fibers'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982Based in Yokohama, JP· patent location history
1999–2017Patents assigned to SEIKO INSTR INC (30)· patent assignee history
1999–2020Based in Chiba, JP· patent location history
2006–2007Patents assigned to TOSHIBA TEC KK (3)· patent assignee history
2006Based in Funabashi, JP· patent location history
2007Based in Irving, CA, US· patent location history
2012–2015Patents assigned to HARADA HIROFUMI (7)· patent assignee history
2012Based in Fuji, JP· patent location history
2016–2019Patents assigned to SII SEMICONDUCTOR CORP (11)· patent assignee history
2018–2020Patents assigned to ABLIC INC (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEIKO INSTR INC301999–2017
SII SEMICONDUCTOR CORP112016–2019
HARADA HIROFUMIself72012–2015
ABLIC INC62018–2020
TOSHIBA TEC KK32006–2007
Locations
LocationPatentsSpan
Chiba, JP431999–2020
Fuji, JP12012
Irving, California, US12007
Funabashi, JP12006
Yokohama, JP11982