Inventor

Akihisa Uchida

Inventor

Koganei, JP

Overview

1987–2016

Patent span

Electricity

Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1026%

H10DInorganic electric semiconductor devices21%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%

G11CStatic stores10%

H10BElectronic memory devices9%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

H01LSemiconductor devices3%

H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner3%

H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses3%

G01RMeasuring electric variables2%

PatentTitleYear

9,503,018'Semiconductor device'2016 9,252,793'Semiconductor device'2016 7,073,147'Method of manufacturing a semiconductor device'2006 5,388,073'Semiconductor integrated circuit device and digital processor employing the same'1995 5,351,211'Semiconductor integrated circuit device having circuit inspection function'1994 5,214,302'Semiconductor integrated circuit device forming on a common substrate MISFETs isolated by a field oxide and bipolar transistors isolated by a groove'1993 5,200,348'Method of manufacturing semiconductor device with constant width deep groove isolation'1993 5,177,584'Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same'1993 5,141,888'Process of manufacturing semiconductor integrated circuit device having trench and field isolation regions'1992 5,128,740'Semiconductor integrated circuit device with isolation grooves and protruding portions'1992 5,084,402'Method of fabricating a semiconductor substrate, and semiconductor device, having thick oxide films and groove isolation'1992 5,029,127'Bipolar SRAM having word lines as vertically stacked pairs of conductive lines parallelly formed with holding current lines'1991 5,011,788'Process of manufacturing semiconductor integrated circuit device and product formed thereby'1991 4,949,162'Semiconductor integrated circuit with dummy pedestals'1990 4,926,378'Bipolar static RAM having two wiring lines for each word line'1990 4,926,235'Semiconductor device'1990 4,907,063'Semiconductor body, and device formed therefrom, having grooves with silicon nitride on the groove surfaces'1990 4,853,343'Method for fabricating a semiconductor integrated circuit device having thick oxide films and groove etch and refill'1989 4,819,054'Semiconductor IC with dual groove isolation'1989 4,809,052'Semiconductor memory device'1989 4,746,963'Isolation regions formed by locos followed with groove etch and refill'1988 4,700,464'Method of forming trench isolation in an integrated circuit'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–1995Patents assigned to HITACHI LTD (17)· patent assignee history

1987–1990Patents assigned to HITACHI MICROCUMPUTER ENG (2)· patent assignee history

1987–1993Based in Koganei, JP· patent location history

1989–1993Based in Tachikawa, JP· patent location history

1990–2016Patents assigned to UCHIDA AKIHISA (2)· patent assignee history

1992–1993Based in Tokyo, JP· patent location history

1994–2006Based in Kokubunji, JP· patent location history

2016Patents assigned to RENESAS ELECTRONICS CORP (2)· patent assignee history

2016Patents assigned to FUNATO YOSHIHIRO (1)· patent assignee history

2016Based in Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	17	1987–1995
HITACHI MICROCUMPUTER ENG	2	1987–1990
RENESAS ELECTRONICS CORP	2	2016
UCHIDA AKIHISAself	2	1990–2016
FUNATO YOSHIHIRO	1	2016

Locations

Location	Patents	Span
Koganei, JP	8	1987–1993
Tachikawa, JP	6	1989–1993
Kanagawa, JP	2	2016
Kokubunji, JP	2	1994–2006
Tokyo, JP	2	1992–1993