Inventor

KANG-ILL SEO

Inventor

US

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 60 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices32%

H01LSemiconductor devices26%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%

B82YSpecific uses or applications of nanostructures13%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%

G01RMeasuring electric variables2%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%

G11CStatic stores1%

H10BElectronic memory devices1%

PatentTitleYear

12,593,674Semiconductor transistor device including backside contact structure vertically between backside power rail and source/drain structure and method of forming thereof2026 12,588,489Integrated circuit devices including stacked elements and methods of forming the same2026 12,575,1473D-stacked transistor structure with barrier layer between upper gate structure and lower gate structure2026 12,564,036Integrated circuit devices including via structures having a narrow upper portion, and related fabrication methods2026 12,543,347Different diffusion break structures for three-dimensional stacked semiconductor device2026 12,543,380Integrated circuit devices including stacked transistors and methods of forming the same2026 12,520,580Macro device-under-test structure for measuring contact resistance of semiconductor device2026 12,494,430Integrated circuit devices including lower interconnect metal layers at cell boundaries and methods of forming the same2025 12,490,491Integrated circuit devices including a back side power distribution network structure and methods of forming the same2025 12,490,502Bipolar junction transistors and P-N junction diodes including stacked nano-semiconductor layers2025 12,477,791Semiconductor device having hybrid channel structure2025 12,471,365Semiconductor device including bottom isolation structure for preventing current leakage2025 12,464,803Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip2025 12,463,136Integrated circuit devices including backside power rail and methods of forming the same2025 12,396,253Integrated circuit devices including stacked field effect transistors and methods of forming the same2025 12,394,704Semiconductor device including interconnect structure with metal bridge pattern connecting adjacent metal lines2025 12,389,660Semiconductor device including backside contact structure with silicide layer formed in FEOL process2025 12,364,018Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked device2025 12,356,689Transistor stacks having insulating spacers, and related fabrication methods2025 12,356,665Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods2025 12,347,774Integrated circuit devices including metal lines spaced apart from metal vias, and related fabrication methods2025 12,336,283Three-dimensional stacked semiconductor device including simplified source/drain contact area2025 12,317,582Integrated circuit devices including a metal resistor and methods of forming the same2025 12,317,588Step-stacked nanowire CMOS structure for low power logic device and method of manufacturing the same2025 12,310,106Devices including stacked nanosheet transistors2025 12,310,062Integrated circuit devices including stacked transistors and methods of forming the same2025 12,278,168Semiconductor device including interconnect structure with planarization stop layer2025 12,272,6473D stacked chip that shares power rails2025 12,274,092Resistance measuring structures of stacked devices2025 12,262,560Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same2025 12,255,248Semiconductor device including backside contact structure having positive slope and method of forming thereof2025 12,249,603Resistor structures of integrated circuit devices including stacked transistors and methods of forming the same2025 12,230,570Integrated circuit with buried power rail and methods of manufacturing the same2025 12,230,571Integrated circuit devices including a power rail and methods of forming the same2025 12,224,314Size-controllable multi-stack semiconductor device and method of manufacturing the same2025 12,211,837Semiconductor device including gate contact structure formed from gate structure2025 12,199,152Selective single diffusion/electrical barrier2025 12,200,920Integrated circuit devices including a power distribution network and methods of forming the same2025 12,183,786Multi-stack semiconductor device with zebra nanosheet structure2024 12,170,322Devices including stacked nanosheet transistors2024 12,125,788Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same2024 12,119,351Semiconductor device having fin-type field effect transistor and method of manufacturing the same2024 12,094,869Diode structures of stacked devices and methods of forming the same2024 12,087,669Integrated circuit devices including discharging path and methods of forming the same2024 12,068,256Method of manufacturing a three dimensional integrated semiconductor architecture having alignment marks provided in a carrier substrate2024 11,935,922Semiconductor device having stepped multi-stack transistor structure2024 11,923,365Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same2024 11,901,363Resistance measuring structures of stacked devices2024 11,901,240Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip2024 11,881,455Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same2024 11,843,001Devices including stacked nanosheet transistors2023 11,764,207Diode structures of stacked devices and methods of forming the same2023 11,694,968Three dimensional integrated semiconductor architecture having alignment marks provided in a carrier substrate2023 11,688,742Different diffusion break structures for three-dimensional stacked semiconductor device2023 11,581,423Integrated circuit devices including an element having a non-linear shaped upper surface and methods of forming the same2023 11,521,902Vertical field-effect transistor (VFET) devices and methods of forming the same2022 11,502,167Semiconductor device having stepped multi-stack transistor structure2022 11,322,602Vertical field-effect transistor (VFET) devices and methods of forming the same2022 11,233,008Method of manufacturing an integrated circuit with buried power rail2022 11,177,260Semiconductor device having fin-type field effect transistor and method of manufacturing the same2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to SAMSUNG ELECTRONICS CO LTD (60)· patent assignee history

2021–2024Based in KR· patent location history

2022–2026Based in US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	60	2021–2026

Locations

Location	Patents	Span
US	56	2022–2026
KR	4	2021–2024