LexDanaLexDanabeta
Inventor

Liubo Hong

Inventor
San Jose, CA, US

Overview

73→
Patents
1999–2021
Patent span
Physics
Primary field (CPC G)

Patents· 73 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer23%
Y10TTechnical subjects covered by former us classification15%
H10NElectric solid-state devices not otherwise provided for14%
B82YSpecific uses or applications of nanostructures8%
H10BElectronic memory devices8%
G11CStatic stores7%
H01JElectric discharge tubes or discharge lamps6%
G01RMeasuring electric variables5%
C23CCoating metallic material4%
H01FMagnets4%
PatentTitleYear
11,021,911Rotary guiding device based on radial driving force20218,969,982'Bottom electrode for MRAM device'20158,793,866'Method for providing a perpendicular magnetic recording head'20148,797,680'Perpendicular magnetic recording head having reduced shield notching'20148,673,654'Underlayer for high performance magnetic tunneling junction MRAM'20148,614,864'Magnetoresistive device with a hard bias capping layer'20138,553,371'TMR reader without DLC capping structure'20138,553,370'TMR reader structure having shield layer'20138,553,360'Magnetic recording head having write pole with higher magnetic moment towards trailing edge'20138,547,660'Magnetic write head manufactured by an enhanced damascene process producing a tapered write pole with a non-magnetic spacer and non-magnetic bump'20138,530,988'Junction isolation for magnetic read sensor'20138,524,095'Process to make PMR writer with leading edge shield (LES) and leading edge taper (LET)'20138,498,078'Magnetic head with flared write pole having multiple tapered regions'20138,451,560'Magnetic head with flared write pole with multiple non-magnetic layers thereover'20138,441,757'Perpendicular magnetic write head with wrap-around shield, slanted pole and slanted pole bump fabricated by damascene process'20138,427,791'Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same'20138,422,276'Spacer structure in MRAM cell and method of its fabrication'20138,400,733'Process to make PMR writer with leading edge shield (LES) and leading edge taper (LET)'20138,349,197'Method for manufacturing a perpendicular magnetic write head having a tapered write pole and non-magnetic bump structure'20138,349,195'Method and system for providing a magnetoresistive structure using undercut free mask'20138,347,488'Magnetic write head manufactured by damascene process producing a tapered write pole with a non-magnetic step and non-magnetic bump'20138,347,489'Method for manufacturing a perpendicular magnetic write head having a leading edge tapered write pole, self aligned side shield and independent trailing shield'20138,316,527'Method for providing at least one magnetoresistive device'20128,310,785'Perpendicular magnetic recording head'20128,284,517'Perpendicular magnetic recording head'20128,273,666'Process to fabricate bottom electrode for MRAM device'20128,233,235'PMR writer having a tapered write pole and bump layer and method of fabrication'20128,216,481'Process for fabricating ultra-narrow dimension magnetic sensor'20128,201,320'Method for manufacturing a magnetic write head having a wrap around shield that is magnetically coupled with a leading magnetic shield'20128,196,285'Method and system for providing a pole for a perpendicular magnetic recording head using a multi-layer hard mask'20128,166,632'Method for providing a perpendicular magnetic recording (PMR) transducer'20128,163,185'Method and apparatus for lifting off photoresist beneath an overlayer'20128,146,236'Method for providing a perpendicular magnetic recording (PMR) transducer'20128,136,224'Method and system for providing a perpendicular magnetic recording head utilizing a mask having an undercut line'20128,136,225'Method and system for providing a perpendicular magnetic recording head'20128,079,135'Method for providing a perpendicular magnetic recording (PMR) transducer'20117,999,360'Underlayer for high performance magnetic tunneling junction MRAM'20117,880,249'Spacer structure in MRAM cell and method of its fabrication'20117,838,436'Bottom electrode for MRAM device and method to fabricate it'20107,785,666'Methods for fabricating a magnetic recording device'20107,611,912'Underlayer for high performance magnetic tunneling junction MRAM'20097,476,919'MRAM cell structure and method of fabrication'20097,449,345'Capping structure for enhancing dR/R of the MTJ device'20087,358,100'Bottom conductor for integrated MRAM'20087,335,960'MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture'20087,265,404'Bottom conductor for integrated MRAM'20077,238,979'Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM'20077,217,577'Structure/method to fabricate a high-performance magnetic tunneling junction MRAM'20077,211,447'Structure and method to fabricate high performance MTJ devices for MRAM applications'20077,208,807'Structure and method to fabricate high performance MTJ devices for MRAM applications'20077,122,852'Structure/method to fabricate a high performance magnetic tunneling junction MRAM'20067,071,009'MRAM arrays with reduced bit line resistance and method to make the same'20067,045,368'MRAM cell structure and method of fabrication'20066,969,895'MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture'20056,960,480'Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head'20056,954,332'Ultra-short yoke and ultra-low stack height writer and method of fabrication'20056,765,756'Ultra-short yoke and ultra-low stack height writer and method of fabrication'20046,695,954'Plasma vapor deposition with coil sputtering'20046,673,724'Pulsed-mode RF bias for side-wall coverage improvement'20046,652,717'Use of variable impedance to control coil sputter distribution'20036,532,823'Insulator layers for magnetoresistive transducers'20036,466,401'Thin film write head with interlaced coil winding and method of fabrication'20026,375,810'Plasma vapor deposition with coil sputtering'20026,369,983'Write head having a dry-etchable antireflective intermediate layer'20026,361,661'Hybrid coil design for ionized deposition'20026,344,419'Pulsed-mode RF bias for sidewall coverage improvement'20026,210,539'Method and apparatus for producing a uniform density plasma above a substrate'20016,198,608'MR sensor with blunt contiguous junction and slow-milling-rate read gap'20016,178,070'Magnetic write head and method for making same'20016,176,981'Wafer bias ring controlling the plasma potential in a sustained self-sputtering reactor'20016,103,070'Powered shield source for high density plasma'20006,077,402'Central coil design for ionized metal plasma deposition'20005,897,752'Wafer bias ring in a sustained self-sputtering reactor'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2004Patents assigned to APPLIED MATERIALS INC (10)· patent assignee history
1999–2015Based in San Jose, CA, US· patent location history
2010–2014Patents assigned to WESTERN DIGITAL FREMONT LLC (15)· patent assignee history
2011–2015Patents assigned to HONG LIUBO (35)· patent assignee history
2011–2014Patents assigned to ZHU HONGLIN (15)· patent assignee history
2013Patents assigned to HGST Netherlands BV (11)· patent assignee history
2021Based in Beijing, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HONG LIUBOself352011–2015
WESTERN DIGITAL FREMONT LLC152010–2014
ZHU HONGLIN152011–2014
HGST Netherlands BV112013
APPLIED MATERIALS INC101999–2004
Locations
LocationPatentsSpan
San Jose, California, US721999–2015
Beijing, CN12021