Inventor
Jae-Hee Oh
Inventor
Gyeonggi-do, KR
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices35%
H10NElectric solid-state devices not otherwise provided for24%
G11CStatic stores16%
H10DInorganic electric semiconductor devices8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
B82YSpecific uses or applications of nanostructures3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
H01GCapacitors1%
H01LSemiconductor devices1%
PatentTitleYear
9,117,595'Electronic component with terminal strips'20158,958,229'Nonvolatile memory device and method of fabricating same'20158,791,448'Semiconductor memory devices having strapping contacts'20148,724,411'Memory devices and memory systems including discharge lines'20148,518,790'Method of forming memory device'20138,493,769'Memory devices including decoders having different transistor channel dimensions and related devices'20138,384,060'Resistive memory device'20138,324,067'Method of forming memory device'20128,148,193'Semiconductor device and method of fabricating the same'20128,143,610'Semiconductor phase-change memory device'20128,119,503'Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed thereby'20128,120,005'Phase change memory devices and their methods of fabrication'20128,039,828'Semiconductor device and method of fabricating the same'20118,030,129'Method of fabricating nonvolatile memory device'20118,021,966'Method fabricating nonvolatile memory device'20117,910,912'Semiconductor devices having a planarized insulating layer'20117,906,773'Phase change memory device'20117,671,395'Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other'20107,651,906'Integrated circuit devices having a stress buffer spacer and methods of fabricating the same'20107,625,777'Memory device having highly integrated cell structure and method of its fabrication'20097,622,307'Semiconductor devices having a planarized insulating layer and methods of forming the same'20097,612,360'Non-volatile memory devices having cell diodes'20097,598,112'Phase change memory devices and their methods of fabrication'20097,541,252'Methods of fabricating a semiconductor device including a self-aligned cell diode'20097,534,723'Methods of forming fine patterns, and methods of forming trench isolation layers using the same'20097,442,602'Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other'20087,375,389'Semiconductor device having a capacitor-under-bitline structure and method of manufacturing the same'20087,163,859'Method of manufacturing capacitors for semiconductor devices'20077,018,903'Method of forming semiconductor device with capacitor'20066,777,735'Semiconductor memory device having a metal plug or a landing pad'20046,620,685'Method for fabricating of semiconductor memory device having a metal plug or a landing pad'20036,486,531'Contact structure with a lower interconnection having t-shaped portion in cross section and method for forming the same'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2015Patents assigned to SAMSUNG ELECTRONICS CO LTD (31)· patent assignee history
2002–2004Based in Seoul, KR· patent location history
2008–2013Based in Gyeonggi-do, KR· patent location history
2008Based in Yongin-si, KR· patent location history
2009–2015Based in Seongnam-si, KR· patent location history
2012–2015Patents assigned to OH JAE-HEE (10)· patent assignee history
2012–2015Patents assigned to PARK JAE-HYUN (5)· patent assignee history
2012–2014Patents assigned to JEONG JI-HYUN (4)· patent assignee history
2012–2014Patents assigned to EUN SUNG-HO (3)· patent assignee history
2015Based in Takasaki, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 31 | 2002–2015 |
| OH JAE-HEEself | 10 | 2012–2015 |
| PARK JAE-HYUN | 5 | 2012–2015 |
| JEONG JI-HYUN | 4 | 2012–2014 |
| EUN SUNG-HO | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 14 | 2008–2013 |
| Seongnam-si, KR | 11 | 2009–2015 |
| Seoul, KR | 3 | 2002–2004 |
| Takasaki, JP | 1 | 2015 |
| Yongin-si, KR | 1 | 2008 |