Inventor
Hideaki Yamasaki
Inventor
Nirasaki, JP
Overview
Patents· 39 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1030%
C23CCoating metallic material29%
H10DInorganic electric semiconductor devices11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H01LSemiconductor devices8%
H01JElectric discharge tubes or discharge lamps5%
H10BElectronic memory devices2%
H05HPlasma technique1%
Y02CCapture, storage, sequestration or disposal of greenhouse gases [ghg]1%
Y02PClimate change mitigation technologies in the production or processing of goods1%
PatentTitleYear
10,968,514Substrate mounting table202110,903,086Titanium silicide region forming method202110,738,374Method of performing a surface treatment on a mounting table, the mounting table and a plasma processing apparatus202010,731,248Vacuum processing apparatus and operation method thereof202010,546,753Method of removing silicon oxide film202010,519,542Purging method201910,504,740Method of removing silicon oxide film20199,330,936'Method for depositing metal layers on germanium-containing films using metal chloride precursors'20169,257,278'Method for forming TiN and storage medium'20169,133,548'TiN film forming method and storage medium'20158,785,310'Method of forming conformal metal silicide films'20148,389,053'Method of cleaning powdery source supply system, storage medium, substrate processing system and substrate processing method'20138,029,621'Raw material feeding device, film formation system and method for feeding gaseous raw material'20117,960,278'Method of film deposition'20117,879,399'CV method using metal carbonyl gas'20117,674,710'Method of integrating metal-containing films into semiconductor devices'20107,482,283'Thin film forming method and thin film forming device'20097,456,109'Method for cleaning substrate processing chamber'20087,427,426'CVD method for forming metal film by using metal carbonyl gas'20087,361,595'Transition metal thin film forming method'20087,344,754'Film formation method'20087,189,431'Method for forming a passivated metal layer'20077,078,341'Method of depositing metal layers from metal-carbonyl precursors'20067,067,422'Method of forming a tantalum-containing gate electrode structure'20067,063,871'CVD process capable of reducing incubation time'20066,989,321'Low-pressure deposition of metal layers from metal-carbonyl precursors'20066,966,936'Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system'20056,924,223'Method of forming a metal layer using an intermittent precursor gas flow process'20056,919,268'Method of manufacturing a WN contact plug'20056,913,996'Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring'20056,846,711'Method of making a metal oxide capacitor, including a barrier film'20056,797,068'Film forming unit'20046,548,398'Production method of semiconductor device and production device therefor'20036,548,112'Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber'20036,489,198'Semiconductor device and method of manufacturing the same'20026,486,063'Semiconductor device manufacturing method for a copper connection'20026,436,203'CVD apparatus and CVD method'20026,399,484'Semiconductor device fabricating method and system for carrying out the same'20026,089,184'CVD apparatus and CVD method'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2021Patents assigned to TOKYO ELECTRON LTD (33)· patent assignee history
2000–2021Based in Nirasaki, JP· patent location history
2002–2016Based in Yamanashi, JP· patent location history
2005–2007Patents assigned to IBM (5)· patent assignee history
2005–2010Based in Kofu, JP· patent location history
2013–2014Patents assigned to HASEGAWA TOSHIO (2)· patent assignee history
2013–2014Patents assigned to YAMASAKI HIDEAKI (2)· patent assignee history
2014Patents assigned to LEUSINK GERRIT J (1)· patent assignee history
2014Based in Tokyo, JP· patent location history
2016Based in Akasaka, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 33 | 2000–2021 |
| IBM | 5 | 2005–2007 |
| HASEGAWA TOSHIO | 2 | 2013–2014 |
| YAMASAKI HIDEAKIself | 2 | 2013–2014 |
| LEUSINK GERRIT J | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nirasaki, JP | 25 | 2000–2021 |
| Yamanashi, JP | 7 | 2002–2016 |
| Kofu, JP | 5 | 2005–2010 |
| Akasaka, JP | 1 | 2016 |
| Tokyo, JP | 1 | 2014 |