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Inventor

Masahiro Deguchi

Inventor
Osaka, JP

Overview

46→
Patents
1978–2021
Patent span
Chemistry
Primary field (CPC C)

Patents· 46 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary
H01JElectric discharge tubes or discharge lamps15%
C25BElectrolytic or electrophoretic processes for the production of compounds or non-metals13%
B82YSpecific uses or applications of nanostructures7%
C01BNon-metallic elements7%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry5%
Y10TTechnical subjects covered by former us classification5%
C07CAcyclic or carbocyclic compounds4%
C30BSingle-crystal growth4%
G11BInformation storage based on relative movement between record carrier and transducer4%
PatentTitleYear
11,090,767Curved plate machining apparatus, and method of manufacturing curved plate with machined outer circumference202110,452,530Information processing apparatus and information processing method201910,087,533Method for reducing carbon dioxide and device used therefor20189,920,439'Water splitting method'20189,598,779'Method for reducing carbon dioxide'20179,598,781'Carbon dioxide reducing method, carbon dioxide reducing cell, and carbon dioxide reducing apparatus'20179,551,077'Photoelectrode used for carbon dioxide reduction and method for reducing carbon dioxide using the photoelectrode'20179,315,913'Formic acid generation apparatus and method'20169,157,158'Method for producing alcohol'20158,709,228'Method for reducing carbon dioxide'20148,709,227'Method for reducing carbon dioxide'20148,696,883'Method for reducing carbon dioxide'20148,617,375'Method for reducing carbon dioxide'20138,597,488'Method for reducing carbon dioxide'20138,414,758'Method for reducing carbon dioxide'20137,736,542'Electron-emitting material, manufacturing method therefor and electron-emitting element and image displaying device employing same'20107,402,340'High thermal conductive element, method for manufacturing same, and heat radiating system'20087,390,474'Porous material and method for manufacturing same, and electrochemical element made using this porous material'20087,351,443'Electron-emmiting material and manufacturing method therefor'20087,252,795'High thermal conductivite element, method for manufacturing same, and heat radiating system'20077,163,429'Method for manufacturing electron-emitting material'20077,147,529'Electron emission material, method of manufacturing the same, and electron emission element including the same'20067,003,962'Thermoelectric transducer, a manufacturing method thereof, a cooling device using the same, and a method for controlling the cooling device'20067,005,691'Magnetoresistance element and magnetoresistance storage element and magnetic memory'20066,903,383'Semiconductor device having a high breakdown voltage for use in communication systems'20056,897,606'Fluorescent-substance light emitting element and method of fabrication thereof, and image rendering device'20056,827,624'Electron emission element and method for producing the same'20046,692,327'Method for producing electron emitting element'20046,645,402'Electron emitting device, electron emitting source, image display, and method for producing them'20036,635,979'Electron emitting device, method of producing the same, and method of driving the same; and image display comprising the electron emitting device and method of producing the same'20036,566,692'Electron device and junction transistor'20036,445,114'Electron emitting device and method of manufacturing the same'20026,400,091'Electron emission element and image output device'20026,350,999'Electron-emitting device'20026,207,282'Substrate surface treatment method'20016,083,354'Treatment method for diamonds'20006,068,883'Process for forming diamond films by nucleation'20006,008,502'Diamond electron emitting device having an insulative electron supply layer'19995,814,194'Substrate surface treatment method'19985,662,965'Method of depositing crystalline carbon-based thin films'19975,338,449'Brine refining apparatus'19945,328,855'Formation of semiconductor diamond'19945,252,174'Method for manufacturing substrates for depositing diamond thin films'19934,539,664'Control system for optical information signal reproduction device'19854,127,881'Tracking control system for magnetic video recording and reproducing system'19784,104,684'Rotary head type magnetic video recording and reproducing system'1978

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1978–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (28)· patent assignee history
1978Based in Yao, JP· patent location history
1985–2018Based in Osaka, JP· patent location history
1994–2010Based in Hirakata, JP· patent location history
2007Based in Hirataka, JP· patent location history
2010–2017Patents assigned to PANASONIC CORP (10)· patent assignee history
2013–2015Patents assigned to DEGUCHI MASAHIRO (4)· patent assignee history
2013–2015Patents assigned to YOTSUHASHI SATOSHI (4)· patent assignee history
2015–2018Patents assigned to PANASONIC IP MAN CO LTD (7)· patent assignee history
2019–2021Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD281978–2008
PANASONIC CORP102010–2017
PANASONIC IP MAN CO LTD72015–2018
DEGUCHI MASAHIROself42013–2015
YOTSUHASHI SATOSHI42013–2015
Locations
LocationPatentsSpan
Osaka, JP251985–2018
Hirakata, JP151994–2010
Tokyo, JP22019–2021
Yao, JP21978
Hirataka, JP12007