Inventor
Yong-yan LU
Inventor
TW
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices36%
H10DInorganic electric semiconductor devices36%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
PatentTitleYear
12,021,082Enhanced channel strain to reduce contact resistance in NMOS FET devices202411,855,089Method and structure for FinFET devices202311,574,907Enhanced channel strain to reduce contact resistance in NMOS FET devices202311,569,230Method and structure for FinFET devices202311,489,054Raised epitaxial LDD in MuGFETs and methods for forming the same2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2024Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (5)· patent assignee history
2022–2024Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 5 | 2022–2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 5 | 2022–2024 |