Inventor

In-Taek Han

Inventor

Seoul, KR

Overview

46→

Patents

2002–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 46 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary

B82YSpecific uses or applications of nanostructures17%

H01JElectric discharge tubes or discharge lamps11%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%

Y10TTechnical subjects covered by former us classification7%

G03GElectrography5%

C09KMaterials for miscellaneous applications, not provided for elsewhere4%

H05BElectric heating4%

C01BNon-metallic elements3%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%

B82BNanostructures formed by manipulation of individual atoms, molecules, or limited collections of atoms or molecules as discrete units3%

PatentTitleYear

10,914,681Functional material including metal-organic framework, method of preparing the same, and photochemical sensor including the same2021 10,649,098Light converting nanoparticle, method of making the light converting nanoparticle, and composition and optical film comprising the same2020 10,217,551Magnetic sheet, method of making the same, and loud speaker including the same2019 10,191,326Film for backlight unit and backlight unit and liquid crystal display including same2019 10,115,496Compositions for preparing electrically conductive composites, composites prepared therefrom, and electronic devices including the same2018 10,020,091Conductive composite, manufacturing method thereof, and electronic device including same2018 9,557,639'Method of patterning block copolymer layer and patterned structure'2017 9,523,882'Film for backlight unit and backlight unit and liquid crystal display including same'2016 9,501,013'Heating member and fusing apparatus including the same'2016 9,417,520'Methods of patterning block copolymer layers and patterned structures'2016 9,362,189'Case including semiconductor nanocrystals, and optoelectronic device including the same'2016 9,348,280'Heating composite, and heating apparatus and fusing apparatus including the same'2016 9,301,417'Sealing material, display device, and method of manufacturing the display device'2016 9,272,902'Resistance heating composition, heating composite using the composition, method of preparing the heating composite, and heating apparatus and fusing apparatus using the same'2016 9,202,997'Semiconductor nanocrystal-polymer micronized composite, method of preparing the same, and optoelectronic device'2015 9,178,212'Composite anode active material, anode including the composite anode active material, lithium battery including the anode, and method of preparing the composite anode active material'2015 9,158,149'Film for backlight unit and backlight unit and liquid crystal display including same'2015 9,052,655'Heating member including a base polymer and fusing apparatus including the same'2015 9,034,212'Composition for forming electron emission source, electron emission source including the composition, method of preparing the electron emission source, and field emission device including the electron emission source'2015 8,608,983'Composite anode active material, anode including the composite anode active material, lithium battery including the anode, and method of preparing the composite anode active material'2013 8,531,096'Field emission device and method of manufacturing the same'2013 8,437,674'Heating member including resistive heating layer, and fusing apparatus and image forming apparatus including the heating member'2013 8,355,661'Fusing device including resistive heating layer and image forming apparatus including the fusing device'2013 8,344,606'Field emission device'2013 8,318,049'Composition for forming electron emission source, electron emission source including the composition, method of preparing the electron emission source, and field emission device including the electron emission source'2012 8,290,418'Heating member using carbon nanotube and fixing unit using the heating member'2012 8,055,177'Heating member including resistive heating layer and fusing device comprising the heating member'2011 7,905,756'Method of manufacturing field emission backlight unit'2011 7,879,398'Carbon-nano tube structure, method of manufacturing the same, and field emitter and display device each adopting the same'2011 7,816,010'Black matrix for color filter and its method of manufacture'2010 7,727,788'Method of manufacturing display device using LED chips formed in a porous template'2010 7,682,973'Method of forming a carbon nanotube structure and method of manufacturing field emission device using the method of forming a carbon nanotube structure'2010 7,608,902'Nanowire composite and preparation method thereof'2009 7,586,034'Display device integrated with solar cells and method of fabricating the same'2009 7,545,090'Design for a field emission display with cathode and focus electrodes on a same level'2009 7,501,146'Carbon nanotube emitter and its fabrication method and field emission device (FED) using the carbon nanotube emitter and its fabrication method'2009 7,495,377'Field emission display (FED) and method of manufacture thereof'2009 7,479,052'Method of growing carbon nanotubes and method of manufacturing field emission device using the same'2009 7,432,217'Method of achieving uniform length of carbon nanotubes (CNTS) and method of manufacturing field emission device (FED) using such CNTS'2008 7,411,343'Inorganic electroluminescent device'2008 7,382,090'Field emission device and field emission display using the same'2008 7,288,884'Field emission backlight unit having emitters disposed on edges of electrodes'2007 6,960,971'Microelectro mechanical system switch'2005 6,780,663'Method of forming floating structure of substrate and method of manufacturing floating structure gate electrode and field emission device employing the floating structure'2004 6,515,415'Triode carbon nanotube field emission display using barrier rib structure and manufacturing method thereof'2003 6,346,775'Secondary electron amplification structure employing carbon nanotube, and plasma display panel and back light using the same'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2011Patents assigned to SAMSUNG SDI CO LTD (15)· patent assignee history

2002–2003Based in Yongin, KR· patent location history

2004–2021Based in Seoul, KR· patent location history

2005–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (30)· patent assignee history

2010–2015Based in Yongin-si, KR· patent location history

2012–2016Patents assigned to HAN IN-TAEK (11)· patent assignee history

2012–2015Patents assigned to KANG HO-SUK (5)· patent assignee history

2012–2016Patents assigned to KIM DONG-EARN (5)· patent assignee history

2016Based in Suwon-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	30	2005–2021
SAMSUNG SDI CO LTD	15	2002–2011
HAN IN-TAEKself	11	2012–2016
KANG HO-SUK	5	2012–2015
KIM DONG-EARN	5	2012–2016

Locations

Location	Patents	Span
Seoul, KR	39	2004–2021
Yongin-si, KR	4	2010–2015
Yongin, KR	2	2002–2003
Suwon-si, KR	1	2016