Inventor
Tomonori Aoyama
Inventor
Yokohama, JP
Overview
Patents· 55 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10BElectronic memory devices10%
H01LSemiconductor devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
C23CCoating metallic material4%
H05BElectric heating3%
B60QArrangement of signalling or lighting devices, the mounting or supporting thereof or circuits therefor, for vehicles in general2%
F21SNon-portable lighting devices2%
PatentTitleYear
11,002,379Manual valve and pneumatic device202110,741,383Semiconductor device and method of manufacturing the same202010,403,642Semiconductor device20199,532,409'Microwave irradiation apparatus and substrate treatment method'20169,466,517'Microwave annealing apparatus and method of manufacturing a semiconductor device'20169,449,848'Manufacturing method for semiconductor device, annealing device, and annealing method'20169,257,299'Method of manufacturing semiconductor device and semiconductor manufacturing apparatus'20169,082,822'Method of manufacturing semiconductor device'20158,999,855'Manufacturing method of a semiconductor device'20158,883,642'Method of manufacturing semiconductor device and semiconductor manufacturing apparatus'20148,828,853'Semiconductor device and method of manufacturing the same'20148,759,205'Semiconductor device and method for manufacturing semiconductor device'20148,658,520'Method of manufacturing semiconductor device'20148,552,411'Manufacturing method of semiconductor device'20138,435,858'Semiconductor device manufacturing method'20138,435,872'Method and apparatus for manufacturing semiconductor device'20138,426,285'Method of fabricating semiconductor device'20138,383,452'Semiconductor device and method for manufacturing the same'20138,198,155'Semiconductor device and method of manufacturing the same'20128,183,641'Semiconductor device and method for manufacturing same'20128,174,079'Semiconductor device having a silicide gate electrode'20128,143,676'Semiconductor device having a high-dielectric-constant gate insulating film'20128,093,141'Method of fabricating a semiconductor device'20128,071,447'Semiconductor device manufacturing method'20118,039,333'Semiconductor device and method of fabricating the same'20118,022,486'CMOS semiconductor device'20117,989,896'Semiconductor device and method of fabricating the same'20117,883,974'Method of manufacturing semiconductor device'20117,858,524'Method of manufacturing semiconductor device with silicide gate electrodes'20107,695,371'Constant velocity joint'20107,641,558'Constant velocity joint'20107,608,498'Method of manufacturing semiconductor device'20097,528,450'Semiconductor device having NMOSFET and PMOSFET and manufacturing method therefor'20097,521,309'Method of manufacturing semiconductor device'20097,335,562'Method of manufacturing semiconductor device'20087,265,428'Semiconductor device having NMOSFET and PMOSFET and manufacturing method thereof'20076,909,156'Semiconductor device and manufacturing method therefor'20056,794,286'Process for fabricating a metal wiring and metal contact in a semicondutor device'20046,297,122'Method of forming conductive film and capacitor'20016,278,164'Semiconductor device with gate insulator formed of high dielectric film'20016,278,152'Semiconductor device and method of manufacturing the same'20016,156,599'Method of making a semiconductor device with capacitor'20006,129,448'Vehicular lighting fixture with discharge bulb and reflector having increased width and depth'20006,090,699'Method of making a semiconductor device'20005,941,633'Headlight for motor vehicle'19995,929,473'MMIC semiconductor device with WN.sub.x capacitor electrode'19995,852,307'Semiconductor device with capacitor'19985,670,808'Metal oxide capacitor with a WN.sub.X electrode'19975,641,702'Method of making semiconductor integrated-circuit capacitor'19975,592,024'Semiconductor device having a wiring layer with a barrier layer'19975,455,747'Vehicle lighting device'19955,440,157'Semiconductor integrated-circuit capacitor having a carbon film electrode'19955,394,050'Electric discharge lamp apparatus for light source of automotive lighting device'19955,168,332'Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus'19925,162,263'Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2016Patents assigned to TOSHIBA KK (44)· patent assignee history
1992–2016Based in Yokohama, JP· patent location history
1995–2000Patents assigned to KOITO MFG CO LTD (4)· patent assignee history
1995–2004Based in Kawasaki, JP· patent location history
1995–2000Based in Shizuoka, JP· patent location history
2007–2015Based in Kanagawa, JP· patent location history
2011–2014Patents assigned to AOYAMA TOMONORI (14)· patent assignee history
2011–2013Patents assigned to INUMIYA SEIJI (5)· patent assignee history
2012–2014Patents assigned to MIYANO KIYOTAKA (7)· patent assignee history
2016Based in Mie, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 44 | 1992–2016 |
| AOYAMA TOMONORIself | 14 | 2011–2014 |
| MIYANO KIYOTAKA | 7 | 2012–2014 |
| INUMIYA SEIJI | 5 | 2011–2013 |
| KOITO MFG CO LTD | 4 | 1995–2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 23 | 1992–2016 |
| Kawasaki, JP | 10 | 1995–2004 |
| Kanagawa, JP | 9 | 2007–2015 |
| Shizuoka, JP | 4 | 1995–2000 |
| Mie, JP | 3 | 2016 |