Inventor

Makoto Sekine

Inventor

Yokohama, JP

Overview

38→

Patents

1985–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 38 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%

H01JElectric discharge tubes or discharge lamps16%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%

C23CCoating metallic material14%

H10DInorganic electric semiconductor devices6%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

C23FNon-mechanical removal of metallic material from surface4%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%

B01DSeparation1%

B01JChemical or physical processes, e.g. catalysis or colloid chemistry1%

PatentTitleYear

11,035,809Thermal diffusion factor measurement device, thermal diffusion factor measurement method and program2021 9,852,892Microwave supply apparatus, plasma processing apparatus, and plasma processing method2017 8,610,353'Plasma generating apparatus, plasma processing apparatus and plasma processing method'2013 7,202,168'Method of producing semiconductor device'2007 7,169,697'Semiconductor device and manufacturing method of the same'2007 7,138,700'Semiconductor device with guard ring for preventing water from entering circuit region from outside'2006 6,991,878'Photomask repair method and apparatus'2006 6,849,923'Semiconductor device and manufacturing method of the same'2005 6,831,367'Semiconductor device and method of manufacturing the same'2004 6,642,149'Plasma processing method'2003 6,605,542'Manufacturing method of semiconductor devices by using dry etching technology'2003 6,352,931'Manufacturing method of semiconductor devices by using dry etching technology'2002 6,334,928'Semiconductor processing system and method of using the same'2002 5,950,083'Method for fabricating CMOS transistor with self-aligned silicide (salicide) structure'1999 5,937,300'Semiconductor apparatus and fabrication method thereof'1999 5,897,713'Plasma generating apparatus'1999 5,776,829'Method for forming multilevel interconnections in a semiconductor device'1998 5,776,557'Method for forming a film on a substrate by activating a reactive gas'1998 5,717,294'Plasma process apparatus'1998 5,661,052'Method of fabricating semiconductor device having low-resistance gate electrode and diffusion layers'1997 5,660,744'Plasma generating apparatus and surface processing apparatus'1997 5,622,888'Method of manufacturing a semiconductor device'1997 5,591,486'Method for forming a film on a substrate by activating a reactive gas'1997 5,491,339'Charged particle detection device and charged particle radiation apparatus'1996 5,444,207'Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field'1995 5,385,763'Method for forming a film on a substrate by activating a reactive gas'1995 5,221,450'Electrostatic chucking method'1993 5,156,881'Method for forming a film on a substrate by activating a reactive gas'1992 5,112,645'Phototreating method and apparatus therefor'1992 4,954,406'Electrophotographic plate including an undercoating layer having a smooth surface'1990 4,878,995'Method of dry etching and apparatus for use in such method'1989 4,844,774'Phototreating method and apparatus therefor'1989 4,838,978'Dry etching apparatus'1989 4,786,361'Dry etching process'1988 4,668,337'Dry-etching method and apparatus therefor'1987 4,642,171'Phototreating apparatus'1987 4,595,601'Method of selectively forming an insulation layer'1986 4,529,475'Dry etching apparatus and method using reactive gases'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–2007Patents assigned to TOSHIBA KK (28)· patent assignee history

1985–2007Based in Yokohama, JP· patent location history

1989–2006Based in Kanagawa, JP· patent location history

1997–1999Patents assigned to NEC CORP (5)· patent assignee history

1997–1999Based in Tokyo, JP· patent location history

1998–2017Patents assigned to TOKYO ELECTRON LTD (4)· patent assignee history

2013–2021Patents assigned to UNIV NAGOYA NAT UNIV CORP (3)· patent assignee history

2013–2017Based in Nagoya, JP· patent location history

2021Patents assigned to BETEL CO LTD (1)· patent assignee history

2021Based in Ibaraki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TOSHIBA KK	28	1985–2007
NEC CORP	5	1997–1999
TOKYO ELECTRON LTD	4	1998–2017
UNIV NAGOYA NAT UNIV CORP	3	2013–2021
BETEL CO LTD	1	2021

Locations

Location	Patents	Span
Yokohama, JP	27	1985–2007
Tokyo, JP	5	1997–1999
Nagoya, JP	2	2013–2017
Kanagawa, JP	2	1989–2006
Ibaraki, JP	1	2021