Inventor
Eun-Ji Jung
Inventor
Gyeonggi-do, KR
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10BElectronic memory devices12%
H01LSemiconductor devices11%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
B01DSeparation1%
C02FTreatment of water, waste water, sewage, or sludge1%
PatentTitleYear
10,700,164Semiconductor devices202010,418,326Semiconductor device and method of fabricating the same201910,388,563Semiconductor device201910,304,734Semiconductor devices and methods of manufacturing the same201910,245,533Simultaneous accomplishment for filtration and washing at pore controllable fiber filter201910,217,820Semiconductor devices201910,062,609Semiconductor devices and methods of manufacturing the same20189,991,203Semiconductor device and method of fabricating the same20189,773,699'Methods of forming wiring structures including a plurality of metal layers'20179,728,604'Semiconductor devices'20178,486,783'Semiconductor device and method of manufacturing the same'20138,173,506'Method of forming buried gate electrode utilizing formation of conformal gate oxide and gate electrode layers'20128,119,526'Method of forming a metal layer and a method of fabricating a semiconductor device'20127,998,810'Methods of forming integrated circuit devices having stacked gate electrodes'20117,968,410'Method of fabricating a semiconductor device using a full silicidation process'20117,936,024'Semiconductor devices having stacked structures'20117,897,500'Methods for forming silicide conductors using substrate masking'20117,867,898'Method forming ohmic contact layer and metal wiring in semiconductor device'20117,846,796'Semiconductor devices including buried bit lines'20107,833,847'Method of forming semiconductor device having stacked transistors'20107,749,840'Methods of forming a semiconductor device including buried bit line'20107,687,331'Stacked semiconductor device and method of fabrication'20107,662,707'Method of forming relatively continuous silicide layers for semiconductor devices'20107,579,225'Method of forming semiconductor device having stacked transistors'20097,569,483'Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus'20097,560,331'Method for forming a silicided gate'20097,531,459'Methods of forming self-aligned silicide layers using multiple thermal processes'20097,435,634'Methods of forming semiconductor devices having stacked transistors'20087,432,185'Method of forming semiconductor device having stacked transistors'20087,416,968'Methods of forming field effect transistors having metal silicide gate electrodes'20087,381,989'Semiconductor device including upper and lower transistors and interconnection between upper and lower transistors'20087,214,620'Methods of forming silicide films with metal films in semiconductor devices and contacts including the same'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (31)· patent assignee history
2007–2011Based in Gyeonggi-do, KR· patent location history
2008–2013Based in Suwon-si, KR· patent location history
2010–2020Based in Hwaseong-si, KR· patent location history
2011Based in Kyungki-do, KR· patent location history
2012–2013Patents assigned to JUNG EUN-JI (3)· patent assignee history
2012–2013Patents assigned to KIM BYUNG-HEE (3)· patent assignee history
2012–2013Patents assigned to SOHN WOONG-HEE (3)· patent assignee history
2012–2013Patents assigned to CHOI GIL-HEYUN (2)· patent assignee history
2019Based in Busan, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 31 | 2007–2020 |
| JUNG EUN-JIself | 3 | 2012–2013 |
| KIM BYUNG-HEE | 3 | 2012–2013 |
| SOHN WOONG-HEE | 3 | 2012–2013 |
| CHOI GIL-HEYUN | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 14 | 2007–2011 |
| Hwaseong-si, KR | 11 | 2010–2020 |
| Suwon-si, KR | 5 | 2008–2013 |
| Busan, KR | 1 | 2019 |
| Kyungki-do, KR | 1 | 2011 |