Inventor
Chanh Nguyen
Inventor
Calabasas, CA, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices45%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
B82YSpecific uses or applications of nanostructures3%
G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes3%
G07CTime or attendance registers3%
H04NPictorial communication, e.g. television3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
PatentTitleYear
10,909,784Remote access authentication and authorization20217,989,842'Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity'20117,700,969'Type II interband heterostructure backward diodes'20107,675,090'Semiconductor device having a contact on a buffer layer thereof and method of forming the same'20107,655,963'Semiconductor device including a lateral field-effect transistor and Schottky diode'20107,564,074'Semiconductor device including a lateral field-effect transistor and Schottky diode'20097,504,673'Semiconductor device including a lateral field-effect transistor and Schottky diode'20097,170,105'Type II interband heterostructure backward diodes'20076,897,137'Process for fabricating ultra-low contact resistances in GaN-based devices'20056,855,948'Low base-emitter voltage heterojunction bipolar transistor'20056,673,265'Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes'20046,635,907'Type II interband heterostructure backward diodes'20036,100,548'Modulation-doped field-effect transistors and fabrication processes'20005,856,217'Modulation-doped field-effect transistors and fabrication processes'19995,766,695'Method for reducing surface layer defects in semiconductor materials having a volatile species'19985,753,545'Effective constant doping in a graded compositional alloy'19985,612,551'AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications'19975,606,195'High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997Patents assigned to HUGHES AIRCRAFT CO (2)· patent assignee history
1997–2000Based in Newbury Park, CA, US· patent location history
1998–2000Patents assigned to HUGHES ELECTRONICS CORP (4)· patent assignee history
2003–2010Patents assigned to HRL LAB LLC (6)· patent assignee history
2003–2011Based in Calabasas, CA, US· patent location history
2009–2010Patents assigned to FLEXTRONICS INT USA INC (4)· patent assignee history
2021Patents assigned to AMAZON TECH INC (1)· patent assignee history
2021Based in Seattle, WA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HRL LAB LLC | 6 | 2003–2010 |
| FLEXTRONICS INT USA INC | 4 | 2009–2010 |
| HUGHES ELECTRONICS CORP | 4 | 1998–2000 |
| HUGHES AIRCRAFT CO | 2 | 1997 |
| AMAZON TECH INC | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Calabasas, California, US | 11 | 2003–2011 |
| Newbury Park, California, US | 6 | 1997–2000 |
| Seattle, Washington, US | 1 | 2021 |