LexDanaLexDanabeta
Inventor

Takumi Mikawa

Inventor
Shiga, JP

Overview

112→
Patents
2000–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 112 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices33%
H10NElectric solid-state devices not otherwise provided for26%
H10DInorganic electric semiconductor devices14%
H01LSemiconductor devices11%
G11CStatic stores7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
Y10TTechnical subjects covered by former us classification1%
C23CCoating metallic material1%
PatentTitleYear
9,680,093'Nonvolatile memory element, nonvolatile memory device, nonvolatile memory element manufacturing method, and nonvolatile memory device manufacturing method'20179,595,563'Nonvolatile memory device'20179,570,682'Semiconductor memory device and method of manufacturing the same'20179,252,189'Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device'20169,214,628'Nonvolatile memory element, nonvolatile memory device, and manufacturing method for the same'20159,184,381'Nonvolatile storage element and method for manufacturing same'20159,172,038'Nonvolatile memory element and method of manufacturing the same'20159,142,775'Method of manufacturing semiconductor memory device'20159,130,167'Method of manufacturing a nonvolatile memory device having a variable resistance element whose resistance value changes reversibly upon application of an electric pulse'20159,105,332'Variable resistance nonvolatile memory device'20159,082,971'Nonvolatile memory device and method for manufacturing the same'20159,082,974'Nonvolatile memory element, nonvolatile memory device, and methods of manufacturing the same'20159,082,968'Variable resistance non-volatile memory device and manufacturing method thereof'20159,076,959'Manufacturing method of nonvolatile memory device and nonvolatile memory device'20159,054,305'Nonvolatile memory device and method of manufacturing the same'20159,012,294'Manufacturing method of non-volatile memory device'20159,006,701'Non-volatile memory device having bit lines and source lines arranged in parallel and manufacturing method thereof'20159,000,506'Variable resistance nonvolatile memory element and method for manufacturing the same'20158,999,808'Nonvolatile memory element and method for manufacturing the same'20158,995,170'Non-volatile memory device'20158,981,333'Nonvolatile semiconductor memory device and method of manufacturing the same'20158,969,168'Method for manufacturing variable resistance element'20158,927,331'Method of manufacturing nonvolatile memory device'20158,921,200'Nonvolatile storage element and method of manufacturing thereof'20148,900,965'Nonvolatile memory device manufacturing method'20148,889,478'Method for manufacturing nonvolatile semiconductor memory element, and nonvolatile semiconductor memory element'20148,871,561'Variable resistance nonvolatile storage device and method for manufacturing the same'20148,861,257'Nonvolatile memory element, manufacturing method thereof, nonvolatile memory device, and design support method for nonvolatile memory element'20148,811,061'Memory device, semiconductor storage device, method for manufacturing memory device, and reading method for semiconductor storage device'20148,796,660'Nonvolatile memory element comprising a resistance variable element and a diode'20148,785,238'Nonvolatile memory element and method for manufacturing same'20148,779,406'Nonvolatile memory element and method for manufacturing the same'20148,759,190'Current steering element and non-volatile memory element incorporating current steering element'20148,692,222'Nonvolatile memory element and method of manufacturing the nonvolatile memory element'20148,624,214'Semiconductor device having a resistance variable element and a manufacturing method thereof'20148,618,526'Nonvolatile memory device and manufacturing method thereof'20138,610,102'Nonvolatile memory device and manufacturing method thereof'20138,592,798'Non-volatile storage device and method for manufacturing the same'20138,581,225'Variable resistance nonvolatile memory device and method of manufacturing the same'20138,574,957'Method for manufacturing nonvolatile semiconductor memory element'20138,563,962'Memory device and method of manufacturing the same'20138,559,205'Nonvolatile semiconductor memory apparatus and manufacturing method thereof'20138,551,853'Non-volatile semiconductor memory device and manufacturing method thereof'20138,537,605'Nonvolatile semiconductor memory device having coplanar surfaces at resistance variable layer and wiring layer and manufacturing method thereof'20138,530,321'Variable resistance element and manufacturing method thereof'20138,492,743'Nonvolatile memory device and method of manufacturing the same'20138,481,990'Nonvolatile memory element'20138,482,958'Current steering element, memory element, memory, and method of manufacturing current steering element'20138,471,235'Nonvolatile memory element having a resistance variable layer and manufacturing method thereof'20138,450,182'Method of manufacturing non-volatile semiconductor memory element and method of manufacturing non-volatile semiconductor memory device'20138,445,883'Nonvolatile semiconductor memory device and manufacturing method thereof'20138,445,886'Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method of manufacturing nonvolatile memory element'20138,441,060'Nonvolatile memory element and nonvolatile memory device incorporating nonvolatile memory element'20138,437,173'Nonvolatile memory element, manufacturing method thereof, design support method therefor, and nonvolatile memory device'20138,426,836'Nonvolatile memory device and manufacturing method thereof'20138,422,268'Current control element, memory element, and fabrication method thereof'20138,399,875'Nonvolatile memory element, and nonvolatile memory device'20138,394,669'Resistance variable element and resistance variable memory device'20138,389,990'Nonvolatile semiconductor memory device and manufacturing method thereof'20138,389,972'Nonvolatile memory device and method of manufacturing the same'20138,384,061'Nonvolatile memory device and manufacturing method'20138,355,274'Current steering element, storage element, storage device, and method for manufacturing current steering element'20138,351,244'Memory cell array, nonvolatile storage device, memory cell, and method of manufacturing memory cell array'20138,344,345'Nonvolatile semiconductor memory device having a resistance variable layer and manufacturing method thereof'20138,295,123'Current rectifying element, memory device incorporating current rectifying element, and fabrication method thereof'20128,258,493'Nonvolatile semiconductor memory apparatus and manufacturing method thereof'20128,253,136'Nonvolatile semiconductor memory device and manufacturing method thereof'20128,242,479'Nonvolatile memory apparatus and manufacturing method thereof'20128,227,788'Nonvolatile memory element, and nonvolatile memory device'20128,227,786'Nonvolatile memory element'20128,198,618'Nonvolatile memory device and manufacturing method thereof'20128,093,578'Nonvolatile memory element, nonvolatile memory element array, and method for manufacturing nonvolatile memory element'20128,013,711'Variable resistance element, semiconductor device, and method for manufacturing variable resistance element'20117,981,760'Method for manufacturing nonvolatile storage element and method for manufacturing nonvolatile storage device'20117,960,770'Nonvolatile memory element array with storing layer formed by resistance variable layers'20117,919,774'Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof'20117,915,656'Nonvolatile semiconductor memory apparatus and manufacturing method thereof'20117,884,346'Nonvolatile memory element and manufacturing method thereof'20117,807,995'Nonvolatile semiconductor memory apparatus and manufacturing method thereof'20107,692,178'Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof'20107,598,556'Ferroelectric memory device'20097,557,011'Semiconductor device and method for fabricating the same'20097,456,455'Semiconductor memory device and method for fabricating the same'20087,420,237'Capacitor element'20087,413,949'Capacitor and method for fabricating the same'20087,344,976'Method for fabricating nonvolatile semiconductor memory device'20087,326,990'Semiconductor device and method for fabricating the same'20087,304,341'Semiconductor device and method for fabricating the same'20077,189,612'Ferroelectric memory and method for manufacturing the same'20077,180,122'Semiconductor device and method for fabricating the same'20077,157,348'Method for fabricating capacitor device'20077,115,937'Semiconductor device and method for manufacturing the same'20067,060,552'Memory device with hydrogen-blocked ferroelectric capacitor'20067,008,840'Method for manufacturing semiconductor device with capacitor elements'20066,972,449'Ferroelectric memory having a hydrogen barrier film which continuously covers a plurality of capacitors in a capacitor line'20056,965,141'Ferroelectric memory and method for manufacturing the same'20056,963,095'Ferroelectric memory device and method for fabricating the same'20056,960,800'Semiconductor device and method for fabricating the same'20056,958,508'Ferroelectric memory having ferroelectric capacitor insulative film'20056,891,715'Capacitor and method for fabricating the same'20056,818,498'Capacitance element and method of manufacturing the same'20046,809,000'Semiconductor device and method for fabricating the same'20046,794,199'Ferroelectric memory and method for fabricating the same'20046,753,566'Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride'20046,750,492'Semiconductor memory with hydrogen barrier'20046,723,637'Semiconductor device and method for fabricating the same'20046,717,198'Ferroelectric memory'20046,602,721'Method for fabricating ferroelectric memory device and method for fabricating the same'20036,590,252'Semiconductor device with oxygen diffusion barrier layer termed from composite nitride'20036,562,677'Capacitance element and method of manufacturing the same'20036,239,462'Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same'20016,166,424'Capacitance structure for preventing degradation of the insulating film'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2007Based in Kyoto, JP· patent location history
2003–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (27)· patent assignee history
2004–2017Based in Shiga, JP· patent location history
2006Based in Ootsu, JP· patent location history
2007–2009Based in Otsu, JP· patent location history
2008–2015Patents assigned to PANASONIC CORP (71)· patent assignee history
2012–2017Patents assigned to MIKAWA TAKUMI (55)· patent assignee history
2012–2015Patents assigned to KAWASHIMA YOSHIO (19)· patent assignee history
2015–2017Patents assigned to PANASONIC IP MAN CO LTD (22)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
PANASONIC CORP712008–2015
MIKAWA TAKUMIself552012–2017
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD272003–2008
PANASONIC IP MAN CO LTD222015–2017
KAWASHIMA YOSHIO192012–2015
Locations
LocationPatentsSpan
Shiga, JP912004–2017
Kyoto, JP162000–2007
Otsu, JP32007–2009
Ootsu, JP22006