LexDanaLexDanabeta
Inventor

Keeyoung Jun

Inventor
Seongnam-si, KR

Overview

4→
Patents
2014–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
C23CCoating metallic material21%
H01LSemiconductor devices14%
C01BNon-metallic elements7%
C30BSingle-crystal growth7%
H01JElectric discharge tubes or discharge lamps7%
H05HPlasma technique7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
PatentTitleYear
10,465,290Substrate processing apparatus20199,576,848'Method of treating a porous dielectric layer and a method of fabricating a semiconductor device using the same'20178,956,458'Vapor deposition device and vapor deposition method'20158,703,590'Vapor-phase growth method for semiconductor film'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2015Patents assigned to ITO TAKAHIRO (2)· patent assignee history
2014–2015Patents assigned to JUN KEEYOUNG (2)· patent assignee history
2014–2015Patents assigned to KOZAWA TAKAHIRO (2)· patent assignee history
2014–2015Patents assigned to NAKASHIMA KENJI (2)· patent assignee history
2014Based in Nagoya, JP· patent location history
2015Based in Nisshin, JP· patent location history
2017–2019Patents assigned to SAMSUNG ELECTRONICS CO LTD (2)· patent assignee history
2017–2019Based in Seongnam-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ITO TAKAHIRO22014–2015
JUN KEEYOUNGself22014–2015
KOZAWA TAKAHIRO22014–2015
NAKASHIMA KENJI22014–2015
SAMSUNG ELECTRONICS CO LTD22017–2019
Locations
LocationPatentsSpan
Seongnam-si, KR22017–2019
Nisshin, JP12015
Nagoya, JP12014