Inventor

Xiangfeng Duan

Inventor

Mountain View, CA, US

Overview

2005–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 52 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary

B82YSpecific uses or applications of nanostructures13%

H10DInorganic electric semiconductor devices12%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%

G11CStatic stores6%

H10KOrganic electric solid-state devices6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

H10HInorganic light-emitting semiconductor devices having potential barriers4%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%

C30BSingle-crystal growth3%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%

PatentTitleYear

11,011,755Holey graphene framework composites for ultra-high rate energy storage and methods of preparing such composites2021 10,971,727Solvated graphene frameworks as high-performance anodes for lithium-ion batteries2021 10,901,243Graphene-based semiconductor chip for tunable THz plasmon generation2021 10,714,272Graphene frameworks for supercapacitors2020 10,692,660Three-dimensional graphene framework-based high-performance supercapacitors2020 10,689,537Dispersions of holey graphene materials and applications thereof2020 10,370,774Chemical vapor deposition growth of graphene2019 10,319,589High performance thin films from solution processible two-dimensional nanoplates2019 10,307,746Palladium hydride nanomaterials2019 9,685,559'Vertically stacked heterostructures including graphene'2017 9,012,882'Graphene nanomesh and method of making the same'2015 8,981,452'Methods and devices for forming nanostructure monolayers and devices including such monolayers'2015 8,871,623'Methods and devices for forming nanostructure monolayers and devices including such monolayers'2014 8,735,226'Methods and devices for forming nanostructure monolayers and devices including such monolayers'2014 8,558,304'Methods and devices for forming nanostructure monolayers and devices including such monolayers'2013 8,507,390'Methods and devices for forming nanostructure monolayers and devices including such monolayers'2013 8,252,164'Methods for nanowire alignment and deposition'2012 8,153,470'Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices'2012 8,143,703'Methods and devices for forming nanostructure monolayers and devices including such monolayers'2012 8,030,161'Gate electrode for a nonvolatile memory cell'2011 7,985,454'Systems and methods for nanowire growth and manufacturing'2011 7,968,474'Methods for nanowire alignment and deposition'2011 7,968,273'Methods and devices for forming nanostructure monolayers and devices including such monolayers'2011 7,951,422'Methods for oriented growth of nanowires on patterned substrates'2011 7,932,511'Large-area nanoenabled macroelectronic substrates and uses therefor'2011 7,915,151'Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices'2011 7,851,841'Large-area nanoenabled macroelectronic substrates and uses therefor'2010 7,776,758'Methods and devices for forming nanostructure monolayers and devices including such monolayers'2010 7,741,197'Systems and methods for harvesting and reducing contamination in nanowires'2010 7,666,708'Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices'2010 7,651,944'Methods of positioning and/or orienting nanostructures'2010 7,595,528'Nano-enabled memory devices and anisotropic charge carrying arrays'2009 7,595,260'Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices'2009 7,501,315'Methods and devices for forming nanostructure monolayers and devices including such monolayers'2009 7,476,596'Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices'2009 7,427,328'Large-area nanoenabled macroelectronic substrates and uses therefor'2008 7,422,980'Methods of positioning and/or orienting nanostructures'2008 7,382,017'Nano-enabled memory devices and anisotropic charge carrying arrays'2008 7,339,184'Systems and methods for harvesting and integrating nanowires'2008 7,301,199'Nanoscale wires and related devices'2007 7,273,732'Systems and methods for nanowire growth and harvesting'2007 7,262,501'Large-area nanoenabled macroelectronic substrates and uses therefor'2007 7,254,151'Nanoscale coherent optical components'2007 7,233,041'Large-area nanoenabled macroelectronic substrates and uses therefor'2007 7,211,464'Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices'2007 7,164,209'Methods of positioning and/or orienting nanostructures'2007 7,135,728'Large-area nanoenabled macroelectronic substrates and uses therefor'2006 7,105,428'Systems and methods for nanowire growth and harvesting'2006 7,083,104'Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites'2006 7,067,867'Large-area nonenabled macroelectronic substrates and uses therefor'2006 7,064,372'Large-area nanoenabled macroelectronic substrates and uses therefor'2006 6,872,645'Methods of positioning and/or orienting nanostructures'2005

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2005–2012Patents assigned to NANOSYS INC (28)· patent assignee history

2005–2007Based in Somerville, MA, US· patent location history

2006–2014Based in Mountain View, CA, US· patent location history

2007–2012Patents assigned to HARVARD COLLEGE (8)· patent assignee history

2007Based in Cambridge, MA, US· patent location history

2010–2021Based in Los Angeles, CA, US· patent location history

2012–2015Patents assigned to DUAN XIANGFENG (6)· patent assignee history

2013–2015Patents assigned to SANDISK CORP (5)· patent assignee history

2015–2021Patents assigned to UNIV CALIFORNIA (11)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NANOSYS INC	28	2005–2012
UNIV CALIFORNIA	11	2015–2021
HARVARD COLLEGE	8	2007–2012
DUAN XIANGFENGself	6	2012–2015
SANDISK CORP	5	2013–2015

Locations

Location	Patents	Span
Mountain View, California, US	32	2006–2014
Los Angeles, California, US	17	2010–2021
Somerville, Massachusetts, US	2	2005–2007
Cambridge, Massachusetts, US	1	2007