Inventor
Shinji Tokuyama
Inventor
Osaka, JP
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures33%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light33%
H10HInorganic light-emitting semiconductor devices having potential barriers18%
H01LSemiconductor devices8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H10DInorganic electric semiconductor devices3%
PatentTitleYear
9,425,348'Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor device'20168,927,962'Group III nitride semiconductor optical device'20158,917,750'III-nitride semiconductor laser diode'20148,803,274'Nitride-based semiconductor light-emitting element'20148,741,674'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,693,515'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,653,621'Nitride-based semiconductor light-emitting element'20148,619,828'Group III nitride semiconductor laser diode'20138,581,296'Compound semiconductor device'20138,546,163'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,541,253'III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device'20138,507,305'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate'20138,415,707'Group III nitride semiconductor device'20138,357,558'Method of making semiconductor light-emitting device'20138,306,082'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,227,898'Ohmic contact on a p-type principal surface tilting with respect to the c-plane'20128,227,277'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20127,933,303'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2016Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (17)· patent assignee history
2011–2014Based in Itami, JP· patent location history
2012–2015Patents assigned to ADACHI MASAHIRO (15)· patent assignee history
2012–2015Patents assigned to TOKUYAMA SHINJI (15)· patent assignee history
2012–2015Patents assigned to KYONO TAKASHI (14)· patent assignee history
2012–2015Patents assigned to UENO MASAKI (13)· patent assignee history
2012–2016Based in Osaka, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SUMITOMO ELECTRIC INDUSTRIES | 17 | 2011–2016 |
| ADACHI MASAHIRO | 15 | 2012–2015 |
| TOKUYAMA SHINJIself | 15 | 2012–2015 |
| KYONO TAKASHI | 14 | 2012–2015 |
| UENO MASAKI | 13 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Osaka, JP | 15 | 2012–2016 |
| Itami, JP | 3 | 2011–2014 |