Inventor
Ryota Imahayashi
Inventor
Kanagawa, JP
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Kprimary
H10KOrganic electric solid-state devices37%
B82YSpecific uses or applications of nanostructures15%
H10DInorganic electric semiconductor devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein6%
C07DHeterocyclic compounds4%
H01LSemiconductor devices4%
G11CStatic stores2%
H10BElectronic memory devices2%
PatentTitleYear
10,749,033Semiconductor device and method for manufacturing semiconductor device20209,917,109'Semiconductor device'20188,785,259'Organic transistor, manufacturing method of semiconductor device and organic transistor'20148,680,679'Semiconductor device and method for manufacturing semiconductor device'20148,653,520'Semiconductor device and method for manufacturing the same'20148,592,821'Semiconductor element, organic transistor, light-emitting device, and electronic device'20138,501,530'Method for manufacturing semiconductor device with organic semiconductor layer'20138,368,065'Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor'20138,362,474'Organic field effect transistor and semiconductor device'20138,361,873'Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device'20138,343,816'Organic transistor, manufacturing method of semiconductor device and organic transistor'20138,318,588'Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate'20128,202,760'Method for manufacturing an organic semiconductor element'20128,187,953'Method of manufacturing SOI substrate'20128,164,098'Semiconductor element, organic transistor, light-emitting device, and electronic device'20128,049,206'Organic field effect transistor and semiconductor device'20118,049,208'Organic semiconductor device having composite electrode'20117,985,967'Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor'20117,977,150'Method for manufacturing an organic semiconductor element'20117,919,772'Semiconductor device and manufacturing method thereof'20117,875,494'Semiconductor device and manufacturing method thereof'20117,749,804'Organic semiconductor device and method for manufacturing the same'20107,727,846'Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device'20107,671,448'Semiconductor device including two organic semiconductor layers'20107,659,138'Method for manufacturing an organic semiconductor element'20107,560,735'Semiconductor element, organic transistor, light-emitting device, and electronic device'20097,554,121'Organic semiconductor device'20096,821,811'Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2020Patents assigned to SEMICONDUCTOR ENERGY LAB (28)· patent assignee history
2004–2013Based in Kanagawa, JP· patent location history
2010–2014Based in Atsugi, JP· patent location history
2012–2018Patents assigned to IMAHAYASHI RYOTA (13)· patent assignee history
2012–2013Patents assigned to FURUKAWA SHINOBU (5)· patent assignee history
2012–2013Patents assigned to FUKAI SHUJI (2)· patent assignee history
2014–2018Patents assigned to FUJII TERUYUKI (2)· patent assignee history
2014–2020Based in Fukuoka, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR ENERGY LAB | 28 | 2004–2020 |
| IMAHAYASHI RYOTAself | 13 | 2012–2018 |
| FURUKAWA SHINOBU | 5 | 2012–2013 |
| FUJII TERUYUKI | 2 | 2014–2018 |
| FUKAI SHUJI | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 18 | 2004–2013 |
| Atsugi, JP | 6 | 2010–2014 |
| Fukuoka, JP | 4 | 2014–2020 |