Inventor
Wen-Chau Liu
Inventor
Tainan, TW
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices71%
G01NInvestigating or analysing materials by determining their chemical or physical properties21%
B82YSpecific uses or applications of nanostructures8%
PatentTitleYear
8,330,169'Multi-gas sensor and method of fabricating the sensor'20126,969,900'Semiconductor diode capable of detecting hydrogen at high temperatures'20056,800,499'Process for preparing a hydrogen sensor'20046,791,126'Heterojunction bipolar transistor with zero conduction band discontinuity'20046,465,815'High-breakdown voltage heterostructure field-effect transistor for high temperature operations'20026,459,103'Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristics'20026,293,137'Hydrogen sensor'20016,197,622'Structure of metal-insulator-semiconductor-like multiple-negative-differential-resistance device and fabrication method thereof'20016,188,081'Fabrication process and structure of the metal-insulator-semiconductor-insulator-metal (MISIM) multiple-differential-resistance (MNDR) device'20016,184,546'High barrier gate and tri-step doped channel field-effect transistor'20016,160,278'Hydrogen-sensitive palladium (PD) membrane/semiconductor schottky diode sensor'20006,118,136'Superlatticed negative-differential-resistance functional transistor'20005,977,572'Low offset voltage AlInAs/GaInAs heterostructure-confinement bipolar transistor'19995,838,030'GaInP/GaInAs/GaAs modulation-compositioned channel field-effect transistor'19985,831,297'Structure of metal-insulator-semiconductor-like mutiple-negative-differential-resistance device'19985,828,077'Long-period superlattice resonant tunneling transistor'19985,789,771'Camel-gate field-effect transistor with multiple modulation-doped channels'19985,701,020'Pseudomorphic step-doped-channel field-effect transistor'19975,698,862'Structure of the heterostructure-emitter and heterostructure-base transistor (HEHBT)'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2004Patents assigned to NAT SCIENCE COUNCIL (12)· patent assignee history
1997–2012Based in Tainan, TW· patent location history
1998–2000Patents assigned to NAT SCIENCE COUNCIL REPUBLIC CHINA (2)· patent assignee history
2001Based in Taiwan, TW· patent location history
2004–2012Patents assigned to UNIV NAT CHENG KUNG (3)· patent assignee history
2012Patents assigned to CHANG CHUNG-FU (1)· patent assignee history
2012Patents assigned to CHEN HUEY-ING (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NAT SCIENCE COUNCIL | 12 | 1997–2004 |
| UNIV NAT CHENG KUNG | 3 | 2004–2012 |
| NAT SCIENCE COUNCIL REPUBLIC CHINA | 2 | 1998–2000 |
| CHANG CHUNG-FU | 1 | 2012 |
| CHEN HUEY-ING | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 18 | 1997–2012 |
| Taiwan, TW | 1 | 2001 |